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Content available remote Photoresistor based on ZnO nanorods grown on a p-type silicon substrate
EN
In this work we discuss a method of preparation of a highly sensitive light detector based on ZnO nanorods. A photoresistor constructed by us is based on a heterojunction between high quality ZnO nanorods and high resistivity p-type Si used as a substrate for nanorods’ deposition. ZnO nanorods are grown by a modified version of a microwave assisted hydrothermal method which allows for growth of high quality ZnO nanorods in a few minutes. The obtained photoresistor responds to a wide spectral range of light starting from near infrared (IR) to ultraviolet (UV). Properties of the detector are evaluated. We propose the use of the detector as an optical switch.
EN
We performed cathodoluminescence (CL) investigations of zinc oxide monolayers obtained by atomic layer deposition. Layers of different thickness were deposited on commercial GaN/sapphire templates. Scanning electron microscopy (SEM) system equipped with CL allows direct comparison of SEM images and CL maps, taken from exactly the same areas of samples. In addition to SEM and CL images, CL profiling was performed by collecting the CL spectra at different accelerating voltages. The CL profiling allows to distinguish the emissions from a surface and volume of samples. An inter-link between samples microstructure and emission properties is investigated. Shifts of emission bands, associated by us with the localization effects, are observed. CL investigations are supported by photoluminescence (PL) measurements, which are characterized by a higher spectral resolution. PL investigations allow determination of the origin of emission bands.
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