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1 Opto-Electronics Review

1 2010

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A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer

Chowdhury S., Adhikary S., Halder N., Chakrabarti S.

Opto-Electronics Review

2010

Vol. 18, No. 3

246-249

In this paper, we present a new approach to obtain large size dots in an MBE grown InAs/GaAs multilayer quantum dot system. This is achieved by adding an InAlGaAs quaternary capping layer in addition to a high growth temperature (590°C) GaAs capping layer with the view to tune the emission wavelength of these QDs towards the 1.3 µm/0.95 eV region important for communication devices. Strain driven migration of In atoms from InAlGaAs alloy to the InAs QDs effectively increases the size of QDs. Microscopic investigations were carried out to study the dot size and morphology in the different layers of the grown samples. Methods to reduce structural defects like threading dislocations in multilayer quantum dot samples are also studied.