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UV-Vis studies of 800 keV Ar ion irradiated NiO thin films

Mallick P., Mishra D. K., Kumar P., Kanjilal D.

Materials Science Poland

2015

Vol. 33, No. 3

555--559

We report the evolution of optical absorption properties of 800 keV Ar ion irradiated NiO thin films through UV-Vis characterization. Our results indicate the existence of both Mott-Hubbard (d → d transition) and charge-transfer (p ! d transition) characteristic of NiO. The optical band gap of NiO increases from 3.58 to 3.75 eV when irradiated at the fluence of 5 x 1014 ions cm-2 but it does not show any remarkable variation upon 800 keV Ar ion irradiation at higher fluences. The refractive index and electron polarizability at different ion fluences have been determined from the optical band gap. Both refractive index and electron polarizability follow an opposite trend to that of the energy gap as a function of ion fluence.

Recent development in ECR sources

Bieth C., Kantas S., Sortais P., Kanjilal D., Rodrigues G.

Nukleonika

2003

Vol. 48,suppl.2

93-98

Recent developments and improvements on the ECR ion source family at PANTECHNIK S.A. are presented. A lot of work has been done in the Ion Implantation Technology with the MICROGAN IndustryŽ source: more than 3 mA have been produced on B1+, P1+ and few hundred žAe on charge state 3+, 4+. Three other developments are described in this paper: a) the construction of the first source using high temperature superconducting coils (30 K) PKSUSŽ - Space Cryomagnetics (UK), in collaboration with NSC (New Delhi); b) the construction of the PHOENIX ECR source (used in the “1+/n+” process for radioactive beam) for different laboratories; c) and the first results on PK 2.45 (a cheap source working at 2.45 GHz) able to produce high current of monocharged beam. We will also present some special products for beam acceleration and diagnosis.