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AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation

Dyakonova N., But D. B., Coquillat D., Knap W., Drexler C., Olbrich P., Karch J., Schafberger M., Ganichev S. D., Ducournau G., Gaquiere C., Poisson M. A., Delage S., Cywinski G., Skierbiszewski C.

Opto-Electronics Review

2015

Vol. 23, No. 3

195-199

We report on the photoresponse dependence on the terahertz radiation intensity in AlGaN/GaN HEMTs. We show that the AlGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm². The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose.