Wyniki wyszukiwania - BazTech

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Investigation of structural, optical and electrical properties of (Ti,Nb)Ox thin films deposited by high energy reactive magnetron sputtering

Mazur M., Kaczmarek D., Prociow E., Domaradzki J., Wojcieszak D., Bochenski J

Materials Science Poland

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2014

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Vol. 32, No. 3

457--464

EN

In this work the results of investigations of the titanium-niobium oxides thin films have been reported. The thin films were manufactured with the aid of a modified reactive magnetron sputtering process. The aim of the research was the analysis of structural, optical and electrical properties of the deposited thin films. Additionally, the influence of post-process annealing on the properties of studied coatings has been presented. The as-deposited coatings were amorphous, while annealing at 873 K caused a structural change to the mixture of TiO2 anatase-rutile phases. The prepared thin films exhibited good transparency with transmission level of ca. 50 % and low resistivity varying from 2 Ωcm to 5×10−2 Ωcm, depending on the time and temperature of annealing. What is worth to emphasize, the sign of Seebeck coefficient changed after the annealing process from the electron to hole type electrical conduction.

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Mixed thick/thin-film thermocouples for thermoelectric microgenerators and laser power sensor

Markowski P., Prociow E., Dziedzic A.

Optica Applicata

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2009

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Vol. 39, nr 4

681-690

EN

This work presents the fabrication of thermopiles with high output voltage. A series of mixed thick/thin-film thermopiles were performed - one of the arms of the thermocouples was screen-printed (PdAg- or Ag-based thick-film layers), the second was made of magnetron sputtered semiconductor (compositions based on Ge). The output parameters (thermoelectric force ET [V], internal resistance Ri [?], output electrical power Pout [W]) of the structures were characterized using a self-made automatic measurement system. The best parameters were achieved for TSG/PdAg (TSG - Ge doped by Sb and Ta) and WSG/Ag (WSG - Ge doped by Sb and W) structures. Generated output voltage per single thermocouple was about 20 mV and output electrical power - 0.55 žW, when temperature difference between hot and cold end was 100 K. Also, the influence of activation process on output parameters was investigated (structures were put into high temperature to initialize recrystallization and grain growth process). The possibilities of using of such structures as thermoelectric microgenerators or sensors were considered. TSG/PdAg-based structures were used to prepare laser power sensor. The level of generated thermoelectric force ET was proportional to the power of the laser beam under investigation. Tests of prototype structures showed that thermoelectric sensors have sufficient resolution and ensure very good repeatability of measurements.

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Characterization of the different energy-gap multilayer structures using near field microscopy

Sikora A., Szeloch R., Prociow E.

Optica Applicata

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2009

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Vol. 39, nr 4

943-950

EN

One of the materials which can be used in high-temperature electronic devices is silicon carbide (SiC). Its properties are very promising, however, a number of technological issues must be solved first, and complex phenomena connected with contact development must be investigated. In this paper, some results the measurements of electrical parameters of the silicon carbide based multilayer SiC:Zr-NiCrSi-Ag systems developed on glass substrate by magnetron co-sputtering method from compositional target are presented. This system was tested electrically as potentially useful to SiC and TiO2 layers contact. Due to the presence of potential barriers, observed with conventional methods, one should use a more precise and sophisticated instrument. One of the important tools which can be used in order to obtain the information about morphological and electrical properties of the surface is the near-field microscopy. Two modes were used during the measurements: EFM (electrostatic force microscopy) and SP (surface potential imaging). Those techniques allow obtaining several sets of data describing different properties of the sample. Moreover, its sophisticated nature delivers the information in submicron scale and no influence on the structure and phenomena is introduced. Also the multichannel data acquisition allows a certain amount of data concerning signals to be collected, which is very useful for the analysis of results in order to identify the presence of artifacts. Some results obtained during preliminary work are hereby presented and described.