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Theoretical modelling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling

Martyniuk Piotr, Michalczewski K., Tsai T. Y., Wu C. H., Wu Y. R.

Opto-Electronics Review

2019

Vol. 27, No. 3

275--281

The paper reports on the barrier mid-wave infrared InAs/InAsSb (xSb = 0.4) type-II superlattice detector operating below thermoelectrical cooling. AlAsSb with Sb composition, xSb = 0.97; barrier doping, ND < 2×10¹⁶ cm⁻³ leading to valence band offset below 100 meV in relation to the active layer doping, ND = 5×10¹⁵ cm⁻³ was proved to be proper material not introducing extra barrier in valence band in the analyzed temperature range in XBn architectures. The detectivity of the simulated structure was assessed at the level of ∼ 1011 Jones at T ∼ 100K assuming absorber thickness, d = 3 μm. The detector’s architecture for high frequency response operation, τs = 420 ps (T ∼ 77K) was presented with a reduced active layer of d = 1 μm.

Heavily Si-doped InAs photoluminescence measurements

Grodecki K., Murawski K., Henig A., Michalczewski K., Benyahia D., Kubiszyn Ł., Martyniuk P.

Materials Science Poland

2017

Vol. 35, No. 3

647--650

In this paper, we present experimental results of photoluminescence for series of InAs:Si heavily doped samples, with doping level varying from 1.6 × 1016 cm−3 to 2.93 × 1018 cm−3. All samples were grown using MBE system equipped with a valved arsenic cracker. The measurements were performed in the temperature range of 20 K to 100 K. Although the Mott transition in InAs appears for electron concentrations above 1014 cm−3, Burstein-Moss broadening of photoluminescence spectra presented in this article was observed only for samples with concentration higher than 2 × 1017 cm−3. For the samples with lower concentrations two peaks were observed, arising from the band gap and defect states. The intensity of the defect peak was found to be decreasing with increasing temperature as well as increasing concentration, up to the point of disappearance when the Burstein-Moss broadening was visible.

Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

Benyahia D., Kubiszyn Ł., Michalczewski K., Kębłowski A., Martyniuk P., Piotrowski J., Rogalski A.

Opto-Electronics Review

2016

Vol. 24, No. 1

40--45

Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards (110). The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.