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1
Content available Mieczysław Wolfke – wizjoner innowacyjności i prekursor kierunku studiów fizyka techniczna
Rogalski Antoni
Postępy Fizyki
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2022
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T. 73, z. 2
29--33
PL
W niniejszym artykule przybliżam działalność naukową i popularnonaukową Mieczysława Wolfkego w zakresie fizyki technicznej. Ponieważ obecne związki nauki z techniką realizowane są w ramach misji uniwersytetu technicznego na koniec przedstawię kilka własnych refleksji na tent temat.
EN
In this article I describe scientific and popular-scientific activities of Mieczyslaw Wolfke in the field of technical physics. As the current relationship between science and technology is realised within the mission of a technical university, finally I present some of my own reflections on the subject.
2
Content available Van der Waals materials for HOT infrared detectors : a review
Rogalski Antoni
Opto-Electronics Review
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2022
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Vol. 30, No. 1
art. no. e140551
EN
In the last decade several papers have announced usefulness of two-dimensional materials for high operating temperature photodetectors covering long wavelength infrared spectral region. Transition metal dichalcogenide photodetectors, such as PdSe₂/MoS₂ and WS₂/HfS₂ heterojunctions, have been shown to achieve record detectivities at room temperature (higher than HgCdTe photodiodes). Under these circumstances, it is reasonable to consider the advantages and disadvantages of two-dimensional materials for infrared detection. This review attempts to answer the question thus posed.
3
Content available Corrigendum to “Van der Waals materials for HOT infrared detectors : a review” [Opto-Electronics Review 30 (2022) e140551]
Rogalski Antoni
Opto-Electronics Review
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2022
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Vol. 30, No. 2
art. no. e141441
4
Content available Review of photodetectors characterization methods
Bielecki Zbigniew, Achtenberg Krzysztof, Kopytko Małgorzata, Mikołajczyk Janusz, Wojtas Jacek, Rogalski Antoni
Bulletin of the Polish Academy of Sciences. Technical Sciences
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2022
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Vol. 70, nr 2
art. no. e140534
EN
The review includes results of analyses and research aimed at standardizing the concepts and measurement procedures associated with photodetector parameters. Photodetectors are key components that ensure the conversion of incoming optical radiation into an electrical signal in a wide variety of sophisticated optoelectronic systems and everyday devices, such as smartwatches and systems that measure the composition of the Martian atmosphere. Semiconductor detectors are presented, and they play a major role due to their excellent optical and electrical parameters as well as physical parameters, stability, and long mean time to failure. As their performance depends on the manufacturing technology and internal architecture, different types of photodetectors are described first. The following parts of the article concern metrological aspects related to their characterization. All the basic parameters have been defined, which are useful both for their users and their developers. This allows for the verification of photodetectors’ workmanship quality, the capabilities of a given technology, and, above all, suitability for a specific application and the performance of the final optoelectronic system. Experimentally validated meteorological models and equivalent diagrams, which are necessary for the correct analysis of parameter measurements, are also presented. The current state of knowledge presented in recognized scientific papers and the results of the authors’ works are described as well.
5
Content available Comparison of performance limits of HOT HgCdTe photodiodes with 2D material infrared photodetectors
Rogalski Antoni, Kopytko Małgorzata, Martyniuk Piotr, Hu Weida
Opto-Electronics Review
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2020
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Vol. 28, No. 2
82--92
EN
The semiempirical rule, “Rule 07” specified in 2007 for P-on-n HgCdTe photodiodes has become widely popular within infrared community as a reference for other technologies, notably for III-V barrier photodetectors and type-II superlattice photodiodes. However, in the last decade in several papers it has been shown that the measured dark current density of HgCdTe photodiodes is considerably lower than predicted by benchmark Rule 07. Our theoretical estimates carried out in this paper support experimental data. Graphene and other 2D materials, due to their extraordinary and unusual electronic and optical properties, are promising candidates for high-operating temperature infrared photodetectors. In the paper their room-temperature performance is compared with that estimated for depleted P i-N HgCdTe photodiodes. Two important conclusions result from our considerations: the first one, the performance of 2D materials is lower in comparison with traditional detectors existing on global market (InGaAs, HgCdTe and type- II superlattices), and the second one, the presented estimates provide further encouragement for achieving low-cost and high performance HgCdTe focal plane arrays operating in high-operating temperature conditions.
6
Content available 2D material infrared and terahertz detectors : status and outlook
Rogalski Antoni, Kopytko Małgorzata, Martyniuk Piotr
Opto-Electronics Review
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2020
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Vol. 28, No. 3
107--154
EN
Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors. Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data. At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.
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