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2 2023

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Voltage-tunable dual-colour quantum Bragg mirror detector (QBMD)

Penello Germano M., Pereira Pedro H., Sousa Vitor B., Kawabata Rudy M. S., Pires Mauricio P., Souza Patricia L.

Opto-Electronics Review

2023

Vol. 31, Special Issue

art. no. e144559

The electronic quasi-bound state in the continuum concept is explored in an InGaAs/InAlAs heterostructure to create a voltage-tunable dual-colour quantum Bragg mirror detector. This heterostructure is based on one main quantum well embedded between two different superlattices. By bandgap engineering, each superlattice gives rise to quasi-bound states in the continuum with a preferential direction for electron extraction. Due to these states, the photovoltaic photocurrent presents a dual-colour response, one in a positive direction at 340 meV (3.6 µm), and one in a negative direction at 430 meV (2.9 µm). The simultaneous dual-colour detection can be switched to a single-colour detection (340 meV or 430 meV) by applying a bias voltage. At 77 K, the specific detectivity for simultaneous dual-colour is 2.5·10⁸ Jones, while the single-colour detectivities are 2.6·10⁹ Jones at +2.0 V and 7.7·10⁸ Jones at -1.6 V for 340 meV and 430 meV, respectively.

Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP

Braga Osvaldo M., Delfino Cristian A., Kawabata Rudy M. S., Pinto Luciana D., Vieira Gustavo S., Pires Mauricio P., Souza Patricia L., Marega Euclydes, Carlin John A., Krishna Sanjay

Opto-Electronics Review

2023

Vol. 31, Special Issue

art. no. e144562

The viability of epitaxial regrowth of non-intentionally doped InP to passivate lateral mesa surfaces of InGaAs photodiodes lattice-matched to InP is investigated, evaluating whether the residual doping of the regrown layer can be responsible for un unexpected increase of the surface current. The effect of residual doping is evaluated via numerical calculations of dark current, considering the range of doping concentrations expected for non-intentionally doped InP. The calculations show that the increase in dark current due to the residual doping of the regrown InP layer is not enough to justify the observed increase in surface current. On the other hand, the technique is still valid as a passivation method if the photodetector pixel is isolated by etching only the top contact layer.