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A rapid analysis of very short channel MOSFET performances by using a dynamic simple model

Rabhi A., El`Hadj Bekka R., Benhamadouche A., Rahmoune F., Charlot J.-J.

International Journal of Microelectronics and Computer Science

2010

Vol. 1, nr 3

225-228

A simplified MOSFET model is presented in this paper. The performances of the model, UNICELL (Unique Cell Model), are compared to those provided by BSIM3V3 taken as reference, even for very short channel length MOSFET (45 nm). It is shown that using only two UNICELL cells (BICELL) gives a good deal for CAD static and dynamic usage, because of the few number of parameters to be used in comparison to BSIM3. BICELL can also be used for determining internal performance analysis.