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Barrier Structures on the Basis of Graded-Band-Gap CdHgTe Obtained by Evaporation-Condensation-Diffusion Method

Świątek Z., Vlasov A. P., Ivashko M. V., Petryna R. L., Bonchyk A. Yu., Sokolovskii B. S.

Archives of Metallurgy and Materials

2016

Vol. 61, iss. 1

115--122

The paper presents the methods of obtaining photovoltaic structures based on CdXHg1-XTe graded-band-gap epitaxial layers. Barriers in these structures were formed by solid phase doping of the material with low-diffusing impurities (As). High-temperature diffusion of acceptor impurity (As) in intrinsically defective material of n-type conductivity as well as ion introducing the donor impurity (B) in uniformly doped during the epitaxy process material of p-type of conductivity have been used. The possibility of creating multi-element graded-band-gap photovoltaic structures suitable for broad band detection of infrared radiation as a result of epitaxial growth by evaporation-condensation-diffusion method has been demonstrated.

Conductivity type conversion in p-CdxHg1-xTe

Berchenko N. N., Bogoboyashchyy V. V., Izhnin I. I., Kurbanov K. R., Vlasov A. P., Yudenkov V. A.

Opto-Electronics Review

2003

Vol. 11, No. 2

93-98

Investigations and comparative analysis of p-to-n type conductivity conversion processes on the identical samples of vacancy doped p-CdxHg1-xTe (x=0.2) under ion - beam milling (IBM) and anodic oxide annealing and on the identical samples of As-doped p-CdxHg1-xTe (x=0.22) under IBM and anodic oxide annealing have been carried out. The conductivity type conversion has been observed at the considerable depth of the vacancy doped material both under IBM or under anodic oxide annealing while in the case with As-doped material only under IBM. It was considered that conversion in all these processes was determined by the mercury interstitial diffusion from corresponding mercury diffusion source and recombination with its native acceptors-cationic vacancies (in the first case) or with donor complex formations (in the second one). It has been shown that in the vacancy-doped p-CdxHg1-xTe the effective diffusion coefficients for the mercury interstitials that determines the depth of the converted layer are equal each other at equal temperatures either under thermal annealing in the saturated mercury vapaur or anodic oxide annealing. It proves the identity of the mercury concentration in the diffusion source. Absence of the conversion under anodic oxide annealing in the As-doped p-CdxHg1-xTe is explained by insufficient Hg concentration in the source and it matches well with necessary condition for donor complex formation as it takes place under IBM.