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Exposition time analysis of AlGaN/GaN HEMT fabrication by electron beam lithography

Indykiewicz Kornelia, Paszkiewicz Bogdan, Paszkiewicz Regina

Optica Applicata

2019

Vol. 49, nr 1

161--166

Electron beam lithography, due to the high design flexibility and high pattering resolution can be used as an exclusive lithography method in device fabrication in R&D reality. To achieve the reasonable time of process exposition, some essential steps and actions must be done. In the article, the main technical and technological dependences, based on AlGaN/GaN HEMT transistor fabrication, will be presented and discussed. As a result of conducted studies, the total time of the most important lithography process expositions will be shown and explained.