The paper deals with the preparation and measurement of an experimental polymer graphite cathode that seems to be a promising and cheap source of electrons utilizing cold field-emission in high- and ultra-high vacuum. Polymer graphite seems to be a proper material as it contains a large amount of hybridized carbon with a low degree of surface oxidation and silicon monoxide (SiO). Within the frame of this work, a special experimental method of tip preparation has been designed and tuned. This method is based on ion milling inside a dual-beam electron microscope enabling to obtain ultra-sharp tips of a diameter smaller than 100 nm with a predefined opening angle. The charge transport within experimental samples is evaluated based on results provided by the noise spectroscopy of the total emission current in the time and frequency domains.
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The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.
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