Wyniki wyszukiwania - BazTech

Ograniczanie wyników

Znaleziono wyników: 1

Liczba wyników na stronie

Wyniki wyszukiwania

Sortuj według:

Ogranicz wyniki do:

Downscaling and short channel effects in twin gate junctionless vertical slit FETs

Barbut L, Jazaeri F, Bouvet D, Sallese J.-M.

International Journal of Microelectronics and Computer Science

2013

Vol. 4, nr 3

103--109

In this work, we present the performance constraints in the design of ultra-thin body Junctionless Vertical Slit Field Effect Transistor (JL VeSFET). A design space that take into account the intrinsic off-current, the sub-threshold swing and the drain induced barrier lowering is investigated with respect to key technological parameters, namely, the doping level in the channel, the minimum slit width, and the effective radius of the slit. This work could serve as a guideline for technology optimization, design and scaling of JL VeSFETs.