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1 1998

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Investigations of materials in random-system by quantitative high-resolution transmission electron microscopy and electron diffraction

Shiojiri M., Endoh H., Saijo H., Isshiki T., Nishio K.

Electron Technology

1998

Vol. 31, No. 2

189-192

A detail of our project, "analysis of materials in random system by accurate measurement of high-resolution transmission electron microscopy (HRTEM) contrast and electron diffraction (ED) intensity" is reviewed. The main method is quantitative HRTEM and ED using an imaging plate (IP) recording and processing system, with the aid of the simulation and compresion. X-ray and neutron diffraction and cathodoluminescence scanning microscopy are also used as complementary methods. We have been making investigations on: 1) the local atomic configuration in cellular random system such as BaTi₂₋xSnFe₄O₁₁ and Fe-Al alloys, and the relation between their structure and magnetic properties; 2) the distribution of atoms at the heterointerfaces in multilayers such as GaAs/GaInP/Al-GaInP and GaAs/AlGaAs, and in polymorphic Zn(Mg)Se; 3) the site of doped Y atoms in BaTiO₃; 4) the structure and crystallization of elements and metal oxides in topological random system.