Wyniki wyszukiwania - BazTech

Ograniczanie wyników

2 Opto-Electronics Review

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Sortuj według:

Ogranicz wyniki do:

HgCdTe epilayers on GaAs : growth and devices

Varavin V. S., Vasiliev V. V., Dvoretsky S. A., Mikhailov N. N., Ovsyuk V. N., Sidorov Y. G., Suslyakov A. O., Yakushev M. V., Aseev A. L.

Opto-Electronics Review

2003

Vol. 11, No. 2

99-111

View of basic and specific physical and chemical features of growth and defect formation in mercury cadmium telluride (MTC) heterostructures (HS's) on GaAs substrates by molecular beam epitaxy (MBE) was made. On the basis of this knowledge a new generation of ultra high vacuum set, ultra-fast ellipsometer of high accuracy and automatic system for control of technological processes was produced for reproducibility of growth MCT HS's on substrates up to 4'' in diameter. The development of industrially oriented technology of MCT HS's growth by MBE on GaAs substrates 2'' in diameter and without intentional doping is presented. The electrical characteristics of n-type and p-type of MCT HS's and uniformity of MCT composition over the surface area are excellent. The residual donor and acceptor centres are supposed as hypothetically tellurium atoms in metalic sublattice ("antisite" tellurium) and double-ionised mercury vacancies. The technology of fabricating focal plane arrays is developed. The high quality characteristics of infrared detectors conductance and diode mode are measured. Calculations of detector parameters predicted the improvement in serial resistance and detectivity of infrared diode detectors based on MCT heterostructures with graded composition throughout the thickness.

HgCdTe MBE grown LWIR linear arrays

Sizov F. F., Vasiliev V. V., Esaev D. G., Ovsyuk V. N., Sidorov Y. G., Reva V. P., Golenkov A. G., Zabudsky V. V., Gumenjuk-Sychevskaya J. V.

Opto-Electronics Review

2001

Vol. 9, No. 4

391-396

Mercury-cadmium-telluride (MCT) 2x64 linear arrays with silicon readouts were designed, manufactured and tested. MCT layers were grown by MBE method on (103) GaAs substrates with CdZnTe buffer layers. 50x50 [mi]m n-p-type photodiodes were formed by boron implantation. The parameters of long wavelenght infrared MCT linear arrays with cutoff wavelenght ʎco ≈ 10.0-12.2 [mi]m and Si readouts were tested separately before hybridisation. The HgCdTe arrays and Si readouts were hybridised by cold welding In bumps technology. Dark carrier transport mechanisms in these diodes were calculated and compared with experimental data. Two major curment mechanisms were included into the current balance equations: trap-assisted tunnelling and Shockley-Reed-Hall generation-recombination processes via a defect trap level in the gap. Other current mechanisms (band-to-band tunnelling, bulk diffusion) were taken into account as additive contributions. Tunnelling rate characteristics were calculated within k-p-aproximation with the constant barrier electric field. Good agreement with experimental data was obtained.