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Zjawiska powierzchniowe przy naświetlaniu g kwantami o energii do 23 MeV próbek metalicznych w atmosferze gazowego sprężonego deuteru

Wiśniewski R., Didyk A. Y., Wilczyńska-Kitowska T.

Postępy Fizyki

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2013

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T. 64, z. 2

76--82

PL

W artykule przedstawiono fragment badań nad układami metal – deuter pod wysokim ciśnieniem, napromieniowanych gamma kwantami o energii do 23MeV. W szczególności pokazane są zdjęcia spękania próbek oraz zdjęcia wyrzutów materii z ich powierzchni, o charakterystycznych składach i o makroskopowych masach.

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Peculiarities of neutron interaction with boron containing semiconductors

Didyk A. Y., Hofman A., Szteke W., Hajewska E., Vlasukova L. A.

Nukleonika

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2009

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Vol. 54, No. 3

163-168

EN

Abstract. The results of point defect creation calculation in B4C, BN and BP semiconductor single crystals irradiated in the fast neutron reactor IBR-2 are presented. It has been shown that during the thermal neutron interaction with light isotope boron atoms (10B) the damage creation by means of fission nuclear reaction fragments (alfa-particles and 7Li recoil nuclei) exceeds the damage created by fast neutrons (En greater than 0.1 MeV) by more than two orders of value. It has been concluded that such irradiation can create a well developed radiation defect structure in boron-containing crystals with nearly homogeneous vacancy depth distribution. This may be used in technological applications for more effective diffusion of impurities implanted at low energies or deposited onto the semiconductor surface. The developed homogeneous vacancy structure is very suitable for the radiation enhanced diffusion of electrically charged or neutral impurities from the surface into the technological depth of semiconductor devices under post irradiation treatment.

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Damage distributions in GaAs single crystal irradiated with 84Kr (394 MeV), 209Bi (710 MeV) and 238U (1300 MeV) swift ions

Didyk A. Y., Komarov F. F., Vlasukova L. A., Gracheva E. A., Hofman A., Yuvchenko V. N., Wiśniewski R., Wilczyńska T.

Nukleonika

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2008

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Vol. 53, No. 2

77-82

EN

We are presenting a study of damage distribution in GaAs irradiated with 84Kr ions of energy EKr = 394 MeV up to the fluence of 5 × 1012 ion/cm-2. The distribution of damage along the projected range of 84Kr ions in GaAs was investigated using selective chemical etching of a single crystal cleaved perpendicularly to the irradiated surface. The damage zone located under the Bragg peak of 84Kr ions was observed. Explanation of the observed effects based on possible processes of channeling of knocked target atoms (Ga and As) is proposed.