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280 nm UV LEDs grown on HVPE GAN substrates

Yasan A., McClintock R., Mayes K., Darvish S. R., Kung P., Razeghi M., Molnar R. J.

Opto-Electronics Review

2002

Vol. 10, No. 4

287-289

We report on the enhancement of optical and electrical properties of 280 nm UV LEDs using low dislocation density HVPE- grown GaN substrate. Compared with the same structure grown on sapphire, these LEDs show ~30% reduction in current - voltage differential resistance, ~15% reduction in turn-on voltage, more than 200% increase in output power slope efficiency and saturation at higher currents. Lower density of defects due to higher material quality and better heat dissipation are believed to be the reason behind these improvements.