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Preparation and spectroscopic analysis of zinc oxide nanorod thin films of different thicknesses

Mia N. H., Rana S. M., Pervez F., Rahman M. R., Hossain K., Al Mortuza A., Basher M. K., Hoq M.

Materials Science Poland

2017

Vol. 35, No. 3

501--510

Zinc oxide thin films with different thicknesses were prepared on microscopic glass slides by sol-gel spin coating method, then hydrothermal process was applied to produce zinc oxide nanorod arrays. The nanorod thin films were characterized by various spectroscopic methods of analysis. From the images of field emission scanning electron microscope (FESEM), it was observed that for the film thickness up to 200 nm the formed nanorods with wurtzite hexagonal structure were uniformly distributed over the entire surface substrate. From X-ray diffraction analysis it was revealed that the thin films had good polycrystalline nature with highly preferred c-axis orientation along (0 0 2) plane. The optical characterization done by UV-Vis spectrometer showed that all the films had high transparency of 83 % to 96 % in the visible region and sharp cut off at ultraviolet region of electromagnetic spectrum. The band gap of the films decreased as their thickness increased. Energy dispersive X-ray spectroscopy (EDS) showed the presence of zinc and oxygen elements in the films and Fourier transform infrared spectroscopy (FT-IR) revealed the chemical composition of ZnO in the film.

Application of Aloe vera gel instead of silicon dioxide as organic dielectric material in microelectronics

Rana S. M., Al-Amin R., Uz-Zaman A., Talukder S. H., Mia N. H., Tayyaba S., Hoq M.

Materials Science Poland

2015

Vol. 33, No. 3

635--638

Organic materials are now being used in a wide range of microelectronic applications in parallel with inorganic materials, because of their superior properties, environmental safety, and low cost. This paper describes the characterization of Aloe vera gel (AVG), a new organic dielectric material. The surface morphology, spatial distribution of elements, and structural characteristics of an AVG layer were examined using scanning electron microscopy, energy-dispersive X-ray spectroscopy (EDX), and X-ray diffraction (XRD), respectively. The resistance of the AVG layer, determined using a four-probe station, was 640 Omega. EDX showed that the elements contained in the layer were carbon, oxygen, aluminum, silicon, calcium, potassium, and copper. The XRD results suggested that the sample primarily consisted of bornite (Cu5FeS4), geerite (Cu8S5), sal ammoniac (NH4Cl), and carobbite (KF).