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The role of antireflective coatings in silicon solar cells - the influence on their electrical parameters

Swatowska B., Stapinski T., Drabczyk K., Panek P.

Optica Applicata

2011

Vol. 41, nr 2

487--492

In this work, the authors compared the properties of multicrystalline silicon solar cells which depended on the kind of following antireflective layers: a-Si:C:H, a-Si:N:H and TiOx. Current-voltage characteristics for multicrystalline silicon solar cells were measured by the use of a computer controlled global spectrum sun simulator under an AM 1.5. The measurements of I-V characteristics allow the determination of basic electrical parameters and efficiency using the double exponential relationship from a two-diode solar cells model. Two key parameters: refractive index and thickness of the film affect the final features of the antireflective coating. Optimisation of these parameters and afterwards the experimental verification lead to the minimalisation of the reflection coefficient that decides about the quality of the antireflective layer. A high quality reflective layer can improve the efficiency of the solar cell even by 30%.

UHV plasma enhanced CVD system for preparation of new generation amorphous silicon based efficient solar cells

Jonas S., Rava P., Stapinski T., Walasek E.

Opto-Electronics Review

2001

Vol. 9, No. 1

91-95

Plasma enhanced chemical vapour deposition (PECVD) is used in the deposition of various thin films such as amorphous silicon, nitrides, oxides and diamond-like carbon. The authors succeeded in preparation of photovoltaic intrinsic a-Si : H with density of 10¹⁶ cm⁻³ and high photocontuctivity gain. These films are the constituents of homojunction p-i-n solar cells or heterojunction type with silicon-carbon window layer of efficiency over 10%. The microwave plasma chemical vapour deposition (MWCVD) seems to be a promising method for the deposition of passivation layers.