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1

Gra „America’s Army” jako narzędzie PR wojska USA

Łęgowski S.

Zeszyty Naukowe Ruchu Studenckiego

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2016

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Nr 1

77--85

PL

W artykule przedstawiono grę America’s Army jako narzędzie PR US Army, które ma na celu poprawę wizerunku Armii oraz zachęcanie młodych ludzi do wstępowania w szeregi wojska. Podobne działania bywają określane w literaturze przedmiotu terminem „employer branding”. Celem poznawczym artykułu jest identyfikacja czynników (elementów), które sprawiają, że gra America’s Army stała się znakomitym narzędziem PR wojska. Pierwsza część artykułu przedstawia rozważania dotyczące definiowania terminu „employer branding” oraz wizerunku. W drugiej części przedstawiono dokładnie grę America’s Army. Ostatnia część artykułu zawiera próbę definiowania pojęcia public relations i wnioski dotyczące gry komputerowej jako narzędzia PR.

EN

This article regards America’s Army game as a PR instrument of the USA Army which purposes are to improve Army image and to encourage young people to join to the Army. Similar activities are specified in the literature as employer branding. The goal of this article is to demonstrate factors which decide about attractiveness of the game and which have made America’s Army a splendid PR instrument of the USA Army. The first part of this text is focused on employer branding and image. The second part of this text shows America’s Army game. The third part contains the term PR and conclusions onthe game as a PR instrument of the USA Army.

2

Photoelectric and photothermal properties of selected II-VI mixed crystals

Firszt F., Łęgowski S., Marasek A., Męczyńska H., Pawlak M., Zakrzewski J.

Opto-Electronics Review

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2004

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Vol. 12, No. 1

161--164

EN

The paper presents investigations of optoelectric and thermal properties of ternary and quaternary II-VI mixed crystals Zn₀.₇Mg₀.₃Se, Zn₀.₈₈Be₀.₁₂Se, Zn₀.₈₃Mg₀.₁₃Be₀.₀₄Se, Zn₀.₈₆Mn₀.₀₈B₀.₀₆Se grown from the melt. The photoluminescence, photoconductivity and photoacoustic amplitude and phase spectra were measured. The energy gap and thermal diffusivity were estimated from photoacoustic spectra. Ionisation energies of defects responsible for observed photoconductivity were determined.

3

Study of Zn1-xMgxSe and Zn1-xBexSe semiconducting crystals by Raman scattering

Szybowicz M., Kozielski M., Firszt F., Łęgowski S., Męczyńska H., Szatkowski J., Paszkowicz W.

Opto-Electronics Review

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1999

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Vol. 7, No. 2

103-106

EN

Wide gap II-VI mixed crystals containing Mg and Be are recently studied extensively for their application in constructing blue-green laser diodes. This work deals with experimental study of optical modes in Zn1-xMgxSe and Zn1-xBexSe semiconductors using Raman scattering method. Measurements have been performed at room and liquid nitrogen temperatures for Zn1-xMgxSe crystals with Mg content in the range 0 < x < 0,34 and for Zn1-xBexSe with Be content in the range 0 < x 0,26. From polarised Raman spectra the longitudinal (LO) and the transverse (TO) optical mode, corresponding to ZnSe- and MgSe - like modes in Zn1-x MgxSe and to ZnSe- and BeSe - like modes in Zn1-xBexSe, were determined. These lattice vibrations can be described by the modified random element isodisplacement (MREI) model.

4

Photoluminescence and structural properties of selected wide-gap II-VI solid solutions.

Firszt F., Łęgowski S., Męczyńska H., Sekulska B., Szatkowski J., Paszkowicz W., Marczak M.

Opto-Electronics Review

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1999

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Vol. 7, No. 2

87-92

EN

This work presents results of investigations of photoluminescence and structural properties of ternary Zn₁-xBexSe, Cd₁-xMgxSe, Zn₁-xMgxSe and quaternary Cd₁-x-yMgxZnySe, Zn₁-x-yBexMgySe, Zn₁-xMgxSe₁-ySy mixed crystals. These crystals were grown from the melt by the high-pressure Bridgman method. Zn₁-xMgxSe and Zn₁-xSrxSe were also obtained by annealing of ZnSe crystals in evacuated quartz ampoules containing Mg or Sr metal. It has been found that admixing of Mg into ZnSe favours the formation of wurtzite Zn₁-xMgxSe while Besphalerite Zn₁-xBexSe structures. Low temperature (40 K) photoluminescence spectra consist of exciton, edge and deep levels emission bands. For most of investigated crystals the emission corresponding to the highest photon energy line in luminescence spectrum is observed up to room temperature.