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1 Prace Naukowe Politechniki Warszawskiej. Elektronika

1 1999

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Effect of cavities in Si-substrate on heteroepitaxial growth of Si(sub 0.85)Ge(sub 0.15) alloys

Gaiduk P., Nylandsted A., Lundsgaard H., Komarov F.

Prace Naukowe Politechniki Warszawskiej. Elektronika

1999

z. 123

55-59

A method of Si quasi-membrane formation for MBE growth of dislocation-free relaxed Si(0.85)Ge(0.15) alloy layers on Si substrate is presented. The Si quasi-membrane is formed by hydrogen im-plantation followed by thermal treatment which result in the formation of void-containing buffer layer that makes Si-Si bonds weaker. The effects of voids on the MBE growth of Si(0.85) Ge(0.15) alloy layers and the formation of misfit dislocations and their glissile arms - threading dislocations arę investigated and documented. It is found that the relaxation of strains in SiGe/Si layers is more enhanced in the case of the growth at void-containing substrate. A good share of threading arms run into the substrate and in this way the reduction of threading dislocations in the surface layer can be explained.