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EN
This work put in evidence, magnetic field effect the electrical parameters of a silicon solar cell illuminated by an intense light concentration: external load electric power, conversion efficiency, fill factor, external optimal charge load. Due to the high photogeneration of a carrier in intense light illumination mode, in addition of magnetic field, we took into account the carrier gradient electric field in the base of the solar cell. Taking into account this electric field and the applied magnetic field in our model led to new analytical expressions of the continuity equation, the photocurrent and the photovoltage. In this work, we used the electric power curves versus junction dynamic velocity (Sj) to determine, according to magnetic field, the maximum electric power Pelmax and we calculate the solar cell conversion efficiency (η). We also used the J-V characteristics to determine the solar cell short circuit density current (Jcc) and the open circuit voltage (Vco) under magnetic field and we calculate the fill factor (FF). Finally, we used simultaneously the J-V characteristics and equipower curves to determine the optimal external load resistance. The results of this study have showed that the maximum electric power and the conversion efficiency are higher than those of monofacial and bifacial silicon solar cells illuminated by conventional light but they decreased with the increase of magnetic field.
EN
In this work, a one dimensional approach is presented for modelling the effect of the incidence angle, varying from 0 rad to π/2 rad, and the intensity of radio waves on the performance of a polycrystalline silicon solar cell under constant multispectral illumination. By solving the continuity equation in steady state, we derived the expression of the density of excess minority carriers, the photocurrent density, the photovoltage, the electric power and their dependence on the incidence angle and the intensity of the electromagnetic field is analyzed. Using the electric power curves versus junction dynamic velocity we determined the electric power lost at the junction, the maximum electric power and we calculated the conversion efficiency for various incidence angle and intensity of the electromagnetic field. The leakage photocurrent density, deduced from the photocurrent density curves versus junction dynamic velocity, and the electric power lost at the junction allowed us to calculate the shunt resistance of the solar cell according to the incidence angle and the intensity of the electromagnetic field. The numerical data show the negative effect of radios waves on the performance of a silicon solar cell.
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