The purpose of this study is to find and develop a model for measuring global solar irradiation at various angles from 0° to 90°. Through empirical studies, a suitable model for the studied site at Ouled Djellal, Biskra (Algeria) was developed, with preliminary data to be used in thermal simulation software for building and simulation of solar energy systems. The results of the proposed model were compared with the experimental data and there was excellent correlation.
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This paper presents the experimentally investigated thermal performance of a single pass solar air heater. The effects of mass flow rate of air on the outlet temperature, Nusselt Number, Reynolds Number, Prandtl Number, heat transfer in the thickness of the solar collector and thermal efficiency were studied. Experiments were performed for the mass flow rates of 0.0108, 0.0145 and 0.0184 kg/s. For this effect was have created a new correlation correspondent of solar air collector with using fins it was written Nu=K1Re^0.939 Pr^0.523 exp(1.2 m) h^(0.0505Pr).The maximum efficiency levels obtained for the 0.0108, 0.0145 and 0.0184 kg/s were 28.63, 39.69 and 55.69% respectively. A comparison of the results of the solar collector without fins shows a substantial enhancement in thermal efficiency.
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Transparent conducting pure and doped zinc oxide thin films with cobalt and indium were deposited on glass substrate by ultrasonic spray method. The thin films were deposited at 350 °C and annealed 500 °C. The direct correlation between the difference of the crystallite size (ΔG) and the difference of the Urbach energy (ΔEu) suggests that the crystallites sizes of the films are predominantly influenced by the disorder of the thin films. The crystallites size in the thin films depend by the disorder (less defects), where the minimum disorder confirmed the high crystallinity. The correlation of the conductivity before and after annealing temperature also indicates that the measurement in the electrical conductivity of the films by the optical band gap was equal; it is predominantly influenced by the transition tail width of undoped and doped ZnO thin films. It will be shown that the conductivity of undoped and doped ZnO is directly correlated with the band gap of the host material. The model proposed of pure and doped ZnO thin film with annealing temperature was investigated.
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