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2 International Journal of Microelectronics and Computer Science

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Estimating the noise-related error in continuous-time integrator-based ADCs

Gosselin P., Koukab A., Kayal M.

International Journal of Microelectronics and Computer Science

2016

Vol. 7, nr 2

54--59

From first-order incremental ΣΔ converters to controlled-oscillator-based converters, many ADC architectures are based on the continuous-time integration of the input signal. However, the accuracy of such converters cannot be properly estimated without establishing the impact of noise. In fact, noise is also integrated, resulting in a random error that is added to the measured value. Since drifting phenomena may make simulations and practical measurements unable to ensure longterm reliability of the converters, a theoretical tool is required. This paper presents a solution to compute the standard deviation of the noise-generated error in continuous-time integrator-based ADCs, under the assumption that a previous measure is used to calibrate the system. In addition to produce a realistic case, this assumption allows to handle a theoretical issue that made the problem not properly solvable. The theory is developed, the equations are solved in the cases of pure white noise, pure flicker noise and low-pass filtered white noise, and the implementation issues implied by the provided formulas are addressed.

Silicon-on-Insulator technology for imaging and application to a switching photodetector

Abdo N., Sallin D., Koukab A., Estribeau M., Magnan P., Kayal M.

International Journal of Microelectronics and Computer Science

2015

Vol. 6, nr 4

136--141

This paper analyzes some advantages of Silicon-on-Insulator (SOI) based photodetectors for low light imaging. It shows that SOI based sensors not only solve the bulk carriers problem, it can also act as a very selective spectral filter by acting as a resonant cavity, which is useful in application with a very narrow spectrum of interest, such as bioluminescence imaging. The SOI implementation of a switching photodetector based with an hybrid MOS-PN structure is presented and its advantages in terms of dark current minimization and SNR improvement highlighted.