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Evolution and recent advances in RF/microwave transistors

Liou J.J., Schwierz F.

Journal of Telecommunications and Information Technology

2004

nr 1

99-105

Most applications for radio frequency/microwave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.

On the extraction of threshold voltage, effective channel length and series resistance of MOSFETs

Ortiz-Conde A., Garcia Sánchez F.J., Liou J.J.

Journal of Telecommunications and Information Technology

2000

nr 3-4

43-58

The first part of this article presents the modeling of the long-channel bulk MOSFET as a particular case of the SOI MOSFET. The second part reviews compares and scrutinizes various methods to extract the threshold voltage, the effective channel and the individual values of drain and source resistances. These are important device parameters for modeling and circuit simulation.