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This work reports results from comparative Mossbauer studies of as-deposited and annealed Fe100.xGax (10 less - than or equal to x less - than or equal to 35) high magnetostrictive thin films of constant thickness (50 plus or minus 2 nm). Films were grown on Si(100) substrates using a co-sputtering and evaporation chamber where Fe has been sputtered and Ga was evaporated. During growth of films, a magnetic field of 65 kA/m has been applied in the plane of the film. Annealed films have been obtained by heating in vacuum for 1 h at 350 centigrade without magnetic field. After annealing, the saturation field of the Fe-Ga films has been significantly reduced. By means of the 57Fe CEMS technique the contributions from several phases have been found: Fe-Ga A2 (bcc), traces of DO3 phase, a gallium-rich disordered phase and iron oxides (both geothite and magnetite). For the sample with x = 26.5 the heat treatment reduces the DO3 phase content whereas for the film with x = 16.4 the opposite tendency has been observed. Mossbauer results were compared with XRD and MOKE findings.
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