Wyniki wyszukiwania - BazTech

Ograniczanie wyników

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Sortuj według:

Ogranicz wyniki do:

Sensitive determination of tinidazole using glassy carbon electrode coated with multi-walled carbon nanotube/ionic liquid/chitosan composite film

Yi H., Hu L., Mei P.

Chemia Analityczna

2009

Vol. 54, No. 1

19-29

A multi-walled carbon nanotube/l-butyl-3-methylimidazolium tetrafluoroborate/chitosan (MWCNT/IL/CS) composite film - modified glassy carbon electrode (OCR) was fabricated by spin coating. Electrochemical behavior of tinidazole at the composite film electrode was investigated applying voltammetry. A distinct reduction peak located at ca -0.688 V <\ was observed during potential cycling in the range from 0.200 V to -1.00 V. Compared to its voltammetric behavior on bare GCE, the reduction peak potential of tinidazole was shifted positively and the peak current significantly increased. All experimental parameters for electrochemical determination of tinidazole were optimized. The detection limit and linear calibration range were 1.OO.x 10-7mol L-7(S/N = 3) and 3.00x 10-7 to 2.00x 10-5 mol L-1, respectively. In addition, using the proposed film electrode determination of tinidazole in real tablets was carried out with satisfactory results.

Przebadano woltamperometrycznie tynidazol z użyciem elektrody z węgla szklistego zmodyfikowanej warstwą kompozytową składającą się z wielościennych nanorurek węglowych, tetrafluoroboranu l-bulylo-3-metyloimidazolu i chitozanu. Wyraźny pik redukcji pojawił się przy -0,688 V. Porównując ten pik do piku uzyskanego na zwykłej elektrodzie z węgla szklistego stwierdzono, że przesunął się on w kierunku potencjałów dodatnich i znacznie wzrósł. Zoptymalizowano wszystkie parametry do elektrochemicznego oznaczania tynida-zolu. Granica wykrywalności wyniosła 1.00 x 10-7 mol L-1 (S/N = 3), a zakres liniowości krzywej kalibracyjnej określono na 3 x 10-7-2x 10-5 mol L-1. Opracowaną metodę użyto z powodzeniem do oznaczania tynidazolu w tabletkach.

High-power Al-free InGaAsP/GaAs near-infrared semiconductor lasers

Razeghi M., Yi H.

Opto-Electronics Review

1998

Vol. 6, No. 2

81-92

We have developed low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technology for the growth of Al-free InxGa₁-xAs₁-yPy compounds lattice-matched to GaAs substrate for the emission wavelengths of 0.808 and 980 nm. The measured device characteristics such as threshold current density Jth, differential efficiency ηd and characteristics temperature To, optical loss αi are compared with model calculations. From these comparisons, it is shown that the Al-free InGaAsP systems have almost 100% internal efficiency, having no significant non-radiative recombination recombination that can affect laser operation. It is shown, however, that the lasers, particularly, optical loss and gain spectrum are rather strongly affected by the material alloy composition fluctuation in InGaAsP active region. The laser structure and fabrication were optimized based on these results for highly efficient high temperature high power laser operation. Maximum output powers up to 7 W in Cw and 8 W in pulse were obtained from the 0.808-µm InGaAsP/GaAs lasers with the optimized structure. Lifetime testing shows no degradation in laser performance for over 30,000 hours in any of randomly selected several 100 µm-wide uncoated lasers operated at 60°C with 1W continuous wave output power.