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2 2019

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Theoretical modelling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling

Martyniuk Piotr, Michalczewski K., Tsai T. Y., Wu C. H., Wu Y. R.

Opto-Electronics Review

2019

Vol. 27, No. 3

275--281

The paper reports on the barrier mid-wave infrared InAs/InAsSb (xSb = 0.4) type-II superlattice detector operating below thermoelectrical cooling. AlAsSb with Sb composition, xSb = 0.97; barrier doping, ND < 2×10¹⁶ cm⁻³ leading to valence band offset below 100 meV in relation to the active layer doping, ND = 5×10¹⁵ cm⁻³ was proved to be proper material not introducing extra barrier in valence band in the analyzed temperature range in XBn architectures. The detectivity of the simulated structure was assessed at the level of ∼ 1011 Jones at T ∼ 100K assuming absorber thickness, d = 3 μm. The detector’s architecture for high frequency response operation, τs = 420 ps (T ∼ 77K) was presented with a reduced active layer of d = 1 μm.

Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors

Michalczewski Krystian, Tsai T. Y., Martyniuk P., Wu C. H.

Bulletin of the Polish Academy of Sciences. Technical Sciences

2019

Vol. 67, nr 1

141--145

We report on the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoresistor grown on GaAs substrate. The device consists of a 200 periods of active layer grown on GaSb buffer layer. The photoresistor reached a 50% cut-off wavelength of 5 μm and 6 μm at 200 K and 300 K respectively. The time constant of 30 ns is observed at 200 K under 1 V bias. This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb above 200 K..