In this paper, an R-C-D turn-off snubber circuit for power MOSFETs has been designed. Since the MOSFET operates at high switching frequencies and there is no way to avoid stray inductances in the circuit due to the connection cables, it is necessary to limit dv/dt of the MOSFET at turn-off. First, PSPICE model of the switching circuit has been obtained and then the effects of the connection cables on the MOSFET voltage has been demonstrated. An appropriate snubber circuit across the MOSFET has been used. The circuit which energies an inductive load from a dc supply has been designed by considering the results from the PSPICE model. Both simulation and experimental results are presented to confirm the correct operation of the snubber circuit.
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