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Fault detection in photovoltaic systems using the inverse of the belonging individual Gaussian probability

Sendjasni Salah, Yagoubi Benabdellah, Daoud Mohamed, Belbachir Nasreddine, Ziane Abderrezzaq

Diagnostyka

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2023

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Vol. 24, No. 1

art. no. 2023112

EN

This article addresses the problem of fault early detection in photovoltaic systems. In the production field, solar power plants consist of many photovoltaic arrays, which may suffer from many different types of malfunctions over time. Hence, fault early detection before it affects PV systems and leads to a full system failure is essential to monitor these systems. The fields of control and monitoring of systems have been extensively approached by many researchers using various fault detection methods. Despite all this research, to early detect and locate faults in a very large photovoltaic power plant, we must, in particular, think of an effective method that allows us to do so at the lowest costs and time. Thus, we propose a new robust technique based on the inverse of the belonging individual Gaussian probability (IBIGP) to early detect and locate faults in the power curve as well as in the Infrared image of the photovoltaic systems. While most fault detection methods are well incorporated in other domains, the IBIGP technique is still in its infancy in the photovoltaic field. We will show, however, in this work that the IBIGP technique is a very promising tool for fault early detection enhancement.

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Structure and Dielectric Properties of V and Y Disorder Doped SrBi2Nb2O9 Ceramics

Afqir Mohamed, Elaatmani Mohamed, Zegzouti Abdelouahad, Tahiri Nabiha, Daoud Mohamed

Archives of Metallurgy and Materials

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2022

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Vol. 67, iss. 4

1455--1458

EN

Y and V codoped SrBi2Nb2O9 ceramics, which have been characterized by XRD, FTIR and SEM techniques, were prepared through molten salt using NaCl-KCl medium. Through X-ray diffraction analysis, all prepared samples were matched by undoped SrBi2Nb2O9. The lattice parameters do not depend on the amount of dopants. Under the optimized experimental conditions, the compounds are composed of small crystallites of varying size and orientation, resulting in many micros train defects. FTIR spectra revealed that the dopant promotes a slight decrease in the 612 cm-1 band. A plate-like morphology was revealed by scanning electron microscopy, while Nyquist plots indicate non-Debye relaxation for all compounds. V and Y were incorporated into SrBi2Nb2O9 lattice in order to reduce dielectric loss tangent. Thus, the codoping increases the of SrB1.9Y0.1Nb1.95V0.05O9 (Y0.1V0.05) ceramic whereas, they were significantly decreased in the case of SrB1.8Y0.2Nb2O9 (Y0.2) ceramic. Y0.1V0.05 sample makes up the highest efficient charge transfer, followed by Y0.2 sample representing the lowest.

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Hydrothermal Synthesis, Impedance and Optical Properties of Tm-Doped SrBi2Nb2O9 Ceramics

Afqir Mohamed, Stojadinović Stevan, Elaatmani Mohamed, Zegzouti Abdelouahad, Tahiri Nabiha, Daoud Mohamed

Archives of Metallurgy and Materials

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2022

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Vol. 67, iss. 1

45--50

EN

In this study, Strontium Bismuth Niobate (SrBi2-xTmxNb2O9 with 0 ≤ x ≤ 0.1) doped by Tm was synthesized using by the hydrothermal method. The microstructure and electrical properties were mainly investigated. XRD analysis showed a single-phase orthorhombic structure for Tm-doped SrBi2Nb2O9 samples. The crystallite size is anisotropic and the strain is apparently independent of Tm amount. Dielectric properties for doped SrBi2Nb2O9 with Tm3+ ion have the same trend discussed for the pure sample. FTIR resulats showed that NbO6 octahedral is formed, on one hand, and on the other hand, it shows that spectras for doped and undoped samples are nearly the same. The Cross-section of ceramics showed the plate-like morphology, also the distribution of the pore in ceramics are observed for all samples. Tm dopants produce only minor changes in the impendence parameter values at room temperature. The luminescent (PL) properties of Tm-doped SrBi2Nb2O9 ceramic powders were investigated. The optimum Tm3+ concentration for the maximum PL intensity was found to be at x = 0.075.