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SiGe HBT wideband amplifier for millimeter wave applications

Krcmar M., Noether N., Boeck G.

Journal of Telecommunications and Information Technology

2007

nr 1

8-12

A wideband amplifier up to 50 GHz has been implemented in a 0.25 žm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author's best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported.

Double balanced resistive mixer for mobile applications

Circa R., Pieńkowski D., Boeck G., Müller M.

Kwartalnik Elektroniki i Telekomunikacji

2004

Vol. 50, z. 4

553-565

We present a double balanced resistive mixer for mobile applications using a 0.35 um MOSFET-Technology. The mixer has been designed for direct conversion receivers with RF - and IF - frequency ranges of 2-3 GHz and DC to 50 MHz, respectively. Excellent performance has been achieved. Typical values are 6 dB conversion loss, 7 dB noise figure, 6.5 dBm 1 dB power compression, 16.5 dBm third order and 55 dBm second order intercept point, and 50 dB isolation between all ports. The mixer does not consume any DC-power and the needed LO-voltage amplitude is 1 V typical. No low frequency noise was detectable down to 10 kHz. We report on the design strategy and present simulated and measured results.