Purpose: Hard nanocomposite nc-TiN/a-SiN films exhibit very attractive mechanical, tribological, optical and electronic properties related to their microstructure and chemical bonding. Design/methodology/approach: In the present work, we investigate ternary thin film TiSiN systems deposited by plasma assisted reactive pulsed magnetron sputtering (PARPMS) from titanium and silicon targets. PARPMS allows one to effectively control ion bombardment by reactive species (e.g., N2 +, N+) on the surface of the growing film by varying the bias voltage (VB) induced by a radiofrequency (RF) power applied to the substrate. Findings: RF biasing without additional heating of the substrate promotes formation of crystals within the nc films. Specifically, (111) crystal orientation at low VB (- 50 V) changed into (200) when VB was increased above - 600 V. At the same time, hardness (H) and reduced Young’s modulus (Er) of the films changed from H ~ 10 GPa and Er ~ 135 GPa to their maximum values of H ~ 25 GPa and Er ~ 248 GPa at VB = - 600 V. For comparison, for films deposited at 300şC and VB = - 200 V, the maximum values of H and Er of ~ 35 GPa and ~ 350 GPa were observed. Practical implications: The use of the PARPMS to effectively control the mechanical properties and microstructure of transition metal nitride systems films. Originality/value: Discussion of evolution of the film microstructure (crystal size and orientation) at constant film composition and relate it with the energetic aspects of the film growth and film characteristics.
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