Wyniki wyszukiwania - BazTech

Ograniczanie wyników

1 Materials Science Poland

1 2020

Znaleziono wyników: 1

Liczba wyników na stronie

Wyniki wyszukiwania

Sortuj według:

Ogranicz wyniki do:

Hafnium dioxide effect on the electrical properties of M/n-GaN structure

Ali Sadoun, Sedik Mansouri, Mohammed Chellali, Nacereddine Lakhdar, Abdelkader Hima, Zineb Benamara

Materials Science Poland

2020

Vol. 38, No. 1

165--173

In the present paper, using of SILVACO-TCAD numerical simulator for studying the enhancement in Pt/n-GaN Schottky diode current–voltage (I-V) characteristics by introduction of a layer of hafnium dioxide (HfO2) (with a thickness e = 5 nm) between the Pt contact and semiconductor interface of GaN is reported. The simulation of I-V characteristics of Pt/n-GaN was done at a temperature of 300 K. However, the simulation of Pt/HfO2/n-GaN structure was performed in a temperature range of 270 – 390 K at steps of 30 K. The electrical parameters: barrier height (Φb), ideality factor and series resistance have been calculated using different methods: conventional I-V, Norde, Cheung, Chattopadhyay and Mikhelashvili. Statistical analysis showed that the metal-insulator-semiconductor (Pt/HfO2/n-GaN) structure has a barrier height of 0.79 eV which is higher compared with the (Pt/n-GaN) structure (0.56 eV). The parameters of modified Richardson (mathematical formula) equation versus (mathematical formula) have been extracted using the mentioned methods. The following values: A∗Simul=22.65 A/cm2⋅K2, 14.29 A/cm2⋅K2, 25.53 A/cm2⋅K2 and 21.75 A/cm2⋅K2 were found. The Chattopadhyay method occurred the best method for estimation the theoretical values of Richardson constant.