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1 2005

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Problems with creaking of Alx Ga 1-x N layers

Dumiszewska E., Lenkiewicz D., Strupinski W., Jasik A., Jakiela R. S., Wesolowski M.

Optica Applicata

2005

Vol. 35, nr 1

111-115

Alx Ga 1-x N a wide band-gap material, which can be used for manufacture of UV detectors. Unfortunately, there are problems with the cracing of those layers occurring above some critical thickness, which is a bit smalle from the one used for detectors (about 1 um). Our investigation concentrated on the causes of crack formation. to avoig it we used so-called special AIN nucleation layer, which was to stop the relaxation. We obtained a strained layer free of cracking, but with a very big number of dislocations. We compared dislocation densities of strained and relaxed Al 0.4 Ga 0.6 N layers. The first one was chracterized by a higher dilocation density than the second one. We also inyestigated the problem with cracking occurring in Al 0.4 Ga 0.6 N epitaxial layers during the doping, and how to control this process. The relaxation of the layers started for very low impurity densities and went on when we increased the amount of the dopant.