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Investigations of optical and thermal properties of surface layers of Cd1-xBexTe samples by the photoacoustic method

Bychto Leszek, Maliński Mirosław, Chrobak Łukasz, Zakrzewski Jacek, Boumhamdi Mohammed

Opto-Electronics Review

2024

Vol. 32, No. 2

art. no. e150186

The work presents the results of a research on the photoacoustic spectra of thin surface layers of Cd₁-xBexTe crystals formed by grinding and polishing their surfaces. As a result of matching the theoretical and experimental photoacoustic spectra, thermal and optical parameters of these layers were determined. Thermal parameters of the surface layers, such as thermal conductivity and thermal diffusivity, turned out to be much worse than the analogous parameters of the substrate. The increase in the optical absorption of surface layers for photon energies below Eg was also determined.

Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques

Dorywalski Krzysztof, Chrobak Łukasz, Maliński Mirosław

Metrology and Measurement Systems

2020

Vol. 27, nr 2

323--337

This work presents results of comparative studies of the optical absorption coefficient spectra of ion implanted layers in silicon. Three nondestructive and noncontact techniques were used for this purpose: spectroscopic ellipsometry (SE), modulated free carriers absorption (MFCA) and the photo thermal radiometry (PTR). Results obtained with the ellipsometric method are the proof of correctness of the results obtained with the MFCA and PTR techniques. These techniques are usually used for investigations of recombination parameters of semiconductors. They are not used for investigations of the optical parameters of semiconductors. Optical absorption coefficient spectra of Fe+ and Ge+ high energy and dose implanted layers in silicon, obtained with the three techniques, are presented and compared.