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EN
Scanning electron microscopy (SEM) is a perfect technique for micro-/nano-object imaging [1] and movement measurement [2, 3] both in high and environmental vacuum conditions and at various temperatures ranging from elevated to low temperatures. In our view, the magnetic field expanding from the pole-piece makes it possible to characterize the behaviour of electromagnetic micro- and nano-electromechanical systems (MEMS/NEMS) in which the deflection of the movable part is controlled by the electromagnetic force. What must be determined, however, is the magnetic field expanding from the e-beam column, which is a function of many factors, like working distance (WD), magnification and position of the device in relation to the e-beam column. There are only a few experimental methods for determination of the magnetic field in a scanning electron microscope. In this paper we present a method of the magnetic field determination under the scanning electron column by application of a silicon cantilever magnetometer. The micro-cantilever magnetometer is a silicon micro-fabricated MEMS electromagnetic device integrating a current loop of lithographically defined dimensions. Its stiffness can be calibrated with a precision of 5% by the method described by Majstrzyk et al. [4]. The deflection of the magnetometer cantilever is measured with a scanning electron microscope and thus, through knowing the bias current, it is possible to determine the magnetic field generated by the e-beam column in a defined position and at a defined magnification.
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