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1 2009

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Characterization of oxidic and organic materials with synchrotron radiation based XPS and XAS

Schmeisser D., Tallarida M., Henkel K., Müller K., Mandal D., Chumakov D., Zschech E.

Materials Science Poland

2009

Vol. 27, No. 1

141--157

The use of synchrotron radiation (SR) based X-ray absorption spectroscopy (XAS) and X-ray induced photoelectron spectroscopy (XPS) is demonstrated for the analysis of thin films. In the first part we report on oxidic films used for high-k dielectric films in Si technology and focus on a recent in-situ approach to study the atomic layer deposition growth of HfO2 films. We demonstrate that even hidden layers can be characterized by using fluorescence technologies. In the second part, we demonstrate the suitability of SR based techniques for the analysis of organic thin films. Here, the first example deals with P(VDF-TrFE), a ferroelectric polymer, with possible applications in non-volatile memory devices. Another example concerns the analysis of C60 based low-k polymers for use in Cu interconnect systems.