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TiO2 waveguides thin films prepared by sol-gel method on glass substrates with and without ZnO underlayer

Bouachiba Y., Taabouche A., Bouabellou A., Hanini F., Sedrati C., Merabti H.

Materials Science Poland

2020

Vol. 38, No. 3

381--385

TiO2 thin films have been deposited on glass substrates with and without ZnO underlayer by sol-gel dip coating process. XRD patterns show the formation of anatase phase with the diffraction lines (1 0 1) and (2 0 0) in TiO2 /glass sample. In TiO2 /(ZnO/glass) sample, TiO2 is composed of anatase phase with the diffraction line (2 0 0) but the diffraction peaks of ZnO wurtzite are also well-defined. The determination of the refractive index and the thickness of the waveguiding layers has been performed by m-lines spectroscopy. The thickness of TiO2 thin films deduced by Rutheford Backscattering Geometry (RBS) agrees well with that obtained by m-lines spectroscopy. TiO2 /glass sample exhibits one guided TE0 and TM0 polarized modes. In TiO2 /(ZnO/glass) sample, only, TE0 single mode has been excited due to cutoff condition.

A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

Sedrati C., Bouabellou A., Kabir A., Haddad R., Boudissa M., Taabouche A., Fiad H., Hammoudi A.

Materials Science Poland

2020

Vol. 38, No. 3

394--399

In this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The samples were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and sheet resistance measurement. The XRD and Raman spectroscopy results showed that the formation of nickel and cobalt silicides (CoSi, Co2Si, Ni2Si, NiSi, NiSi2, CoSi2) is an annealing temperature dependent diffusion process. The diffusion phenomenon was evidenced by RBS. The low values of the sheet resistance which were correlated with the films surface roughness were attributed to the formation of both CoSi and NiSi phases.

Structural and optical properties of TiO2 thin films grown by sol-gel dip coating process

Bouachiba Y, Bouabellou A, Hanini F, Kermiche F, Taabouche A, Boukheddaden K

Materials Science Poland

2014

Vol. 32, No. 1

1--6

The mono and bi-layer TiO2 thin films have been prepared by sol-gel method on glass. X-Ray diffraction, Raman spectroscopy, atomic force microscopy, spectroscopic ellipsometry and m-lines spectroscopy techniques have been used to characterize the TiO2 films. The mono-layer film is found to be amorphous, while the bi-layer film shows the presence of anatase phase. The bi-layer film exhibits more homogeneous surface with less roughness. The thickness effect on the refractive index, extinction ceofficient, packing density and optical band gap is analysed. The waveguiding measurements of the bi-layer film exhibit single-guided TE0 and TM0 polarized modes from which we can measure the refractive index and the film thickness.