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2 Opto-Electronics Review

2 2023

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InAs light-to-heavy hole effective mass ratio determined experimentally from mobility spectrum analysis

Wróbel Jarosław, Umana-Membreno Gilberto A., Boguski Jacek, Złotnik Sebastian, Kowalewski Andrzej, Moszczyński Paweł, Antoszewski Jarek, Faraone Lorenzo, Wróbel Jerzy

Opto-Electronics Review

2023

Vol. 31, Special Issue

art. no. e144567

Careful selection of the physical model of the material for a specific doping and selected operating temperatures is a non-trivial task. In numerical simulations that optimize practical devices such as detectors or lasers architecture, this challenge can be very difficult. However, even for such a well-known material as a 5 μm thick layer of indium arsenide on a semiinsulating gallium arsenide substrate, choosing a realistic set of band structure parameters for valence bands is remarkable. Here, the authors test the applicability range of various models of the valence band geometry, using a series of InAs samples with varying levels of p-type doping. Carefully prepared and pretested the van der Pauw geometry samples have been used for magneto-transport data acquisition in the 20-300 K temperature range and magnetic fields up to ±15 T, combined with a mobility spectra analysis. It was shown that in a degenerate statistic regime, temperature trends of mobility for heavy- and light-holes are uncorrelated. It has also been shown that parameters of the valence band effective masses with warping effect inclusion should be used for selected acceptor dopant levels and range of temperatures.

Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors

Morath Christian P., Casias Lilian K., Umana-Membreno Gilberto A., Webster Preston T., Grant Perry C., Maestas Diana, Cowan Vincent M., Faraone Lorenzo, Krishna Sanjay, Balakrishnan Ganesh

Opto-Electronics Review

2023

Vol. 31, Special Issue

art. no. e144554

The sensitivity of III-V-based infrared detectors is critically dependent upon the carrier concentration and mobility of the absorber layer, and thus, accurate knowledge of each is required to design structures for maximum detector performance. Here, measurements of the bulk in-plane resistivity, in-plane mobility, and carrier concentration as a function of temperature are reported for non-intentionally doped and Si-doped mid-wave infrared InAs₀.₉₁Sb₀.₀₉ alloy and InAs/InAs₀.₆₅Sb₀.₃₅ type-II superlattice materials grown on GaSb substrates. Standard temperature- and magnetic-field-dependent resistivity and the Hall measurements on mesa samples in the van der Pauw configuration are performed, and multicarrier fitting and modelling are used to isolate transport of each carrier species. The results show that up to 5 carrier species of the surface, interface and bulk variety contribute to conduction, with bulk electron and hole mobility up to 2·10⁵ cm²/V s and 8·10³ cm²/V s, respectively and background dopant concentration levels were between 10¹⁴ and 10¹⁵ cm¯³. The in-plane mobility temperatures dependence is determined and trends of each carrier species with temperature and dose are analysed.