Wyniki wyszukiwania - BazTech

1

Nature of gallium deep centres in lead telluride based semiconductors

Petrenko T. L., Plyatsko S. V.

Opto-Electronics Review

|

2010

|

Vol. 18, No. 3

310-317

EN

Doped with Ga lead telluride was taken as a model object to explain the nature of group-III deep levels in IV-VI semiconductors and to elucidate the vapour phase doping mechanism. For this goal, interaction of various gallium-containing molecules with defect-free crystal as well as with native defects in PbTe was considered. Formation energies for different point defects created in PbTe as a result of interaction the Ga2Te molecules, Ga2 dimers and single Ga atoms with a host crystal were calculated using density functional theory. Particularly GaPb and Gai together with formation of accompanied self interstitials Pbi in various charge states were examined. In addition we propose the new type of defects - the impurity complex (2Ga)Pb which looks like <111>-oriented gallium dumbbell. Calculations suggest the double donor behaviour and DX-like properties of this defect together with extremely low formation energy values. Namely, (2Ga)Pb centres are preferably formed under Ga2Te doping while (Ga2)Pb+Pbi ones are formed under Ga2 or Ga doping. In all cases, formation energies are negative and resulting defect concentration is determined by reaction kinetics only. Mechanisms of the lead vacancy compensation with the vapour phase doping are considered as well.

2

Electrical and structural properties of HgCdTe/Si films obtained by the laser epitaxy

Plyatsko S. V., Vergush M. M., Plyatsko S. K., Piotrowski T.

Electron Technology

|

2000

|

Vol. 33, No. 4

548-552

EN

In this paper Investigations of HgCdTe layers are presented. The layers have been grown on silicon substrate by evaportation technique using a modulated infrared, large power laser beam. The investigated parametaers included resistivity, the Hall coefficient and mobility of n-type layers obtained by means of evaportation of a solid source or power tablet. The results of characterization using Auger spectroscopy are also shown together with AFM results.

3

Investigations of laser deposited semiconductor layers with the STM

Piotrowski T., Pułtorak J., Kulumbetov Z. E., Liptuga A. I., Plyatsko S. V.

Electron Technology

|

1998

|

Vol. 31, No. 2

219-223

EN

In the work results of topographic measurements with the STM (scanning tunneling microscope) for the determination of the surface roughness and grain dimensions of PbTe/BaF₂ layers grown by the source evaporation technique have been presented. The measuremants have been carried out for various substrate temperatures (100 ÷ 400°C) and various power densities of the laser beam. A modulated infrared laser with hv