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Application of triton X-100 surfactant for silicon anisotropic etching in KOH-based solutions

Rola K. P., Zubel I.

Materials Science Poland

2013

Vol. 31, No. 4

525--530

The results of etching of silicon surfaces with different crystallographic orientations in KOH solutions containing a nonionic surfactant Triton X-100 are presented in this paper. The etch rate ratio R(100)/R(110) >1, typical of KOH + IPA and TMAH + Triton X-100 mixtures, is achieved. The surface morphology of Si(hkl) wafers is closely investigated by SEM and AFM. The very low roughness of (110) and its vicinal (hh1) planes is observed and measured. In addition, the relatively smooth (h11) surfaces are obtained in the solution with Triton X-100 surfactant, as compared to the KOH solutions containing alcohols. Due to good smoothness of the studied surfaces, the KOH solution with Triton X-100 seems to be especially interesting for bulk micromachining employing non-standard (hkl) planes. The examples of mesas and trenches fabricated by anisotropic etching in the KOH solution containing Triton X-100 surfactant are presented.

Study on etching anisotropy of Si(hkl) planes in solutions with different KOH and isopropyl alcohol concentrations

Rola K. P., Zubel I.

Materials Science Poland

2011

Vol. 29, No. 4

278--284

The paper deals with wet chemical anisotropic etching of Si(hkl) wafers in KOH solutions containing isopropyl alcohol. The impact of KOH and alcohol concentrations on the etch rates of (hkl) planes is shown. The effect of KOH concentration in pure KOH solutions resembles the one in KOH solutions non-saturated with alcohol and is different from the one in KOH solutions saturated with isopropanol. The increase in alcohol concentration in the etching solution generally reduces the etch rates of the selected (hkl) planes. However, when the alcohol concentration reaches the saturation level, the (100) and (311) etch rates increase. This is difficult to explain since the increased alcohol concentration should cause enhanced adsorption of the alcohol molecules on Si surface, as it is suggested by surface tension measurements. Thus, the denser adsorption layer should lead to the etch rate reduction. The influence of isopropanol concentration on the morphology of the (hkl) surfaces is also studied. The increase in the alcohol concentration leads to disappearance of hillocks on (100) and (h11) surfaces.