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EN
A new technique to enhance single-stage operational transconductance amplifiers (OTAs) is presented. Enhanced DC gain and reduced input parasitic capacitances are achieved by employing two input fully-differential voltage combiners, i.e. a combination of transistors in common-drain and common-source configurations operating as a preamplifier stage. Simulation results show that the input capacitance can be as small as 195 fF (corresponding to a 46 % reduction) while achieving a GBW of 1982 MHZ (@ CL = 1 pF) with a PM of about 60⁰. The complete amplifier dissipates only 1.78 mW corresponding to a figure-of-merit (FoM) of 1115 MHz-pF/mW.
EN
In this paper it is presented a balun LNA, with voltage gain control that combines a common-gate and common-source stage, in which transistors biased in triode region replace the resistive loads. This last approach in conjunction with a dynamic threshold reduction technique allows a low supply voltage operation. Furthermore, a significant chip area reduction can be exploited by adopting an inductor-less configuration. Simulations results with a 130 nm CMOS technology show that the gain is up to 19.3 dB and the NF is below 2.3 dB. The total dissipation is 4 mW, leading to an FOM of 2.26 for 0.6 V supply.
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