In the present work is studied synthesis of galium nitride (GaN) and aluminum nitride (AlN) by DC Reactive Magnetron Sputtering technology. As a sputtering target was used high purity (99.9999%) Gallium and Aluminum materials and as a reagent gas was used high purity (99.9999%) Nitrogen. Magnetron sputtering system with strong magnets (1450 mT) allows to make plasma at a low preasure 3 × 10-2 Pa and deposition process was carried out at high vacuum conditions. Deposited layers of GaN and AlN on the sappire substrate was analysed by X-ray diffraction (XRD) and revealed the crystalline nature highly oriented with the (0002) for both nitrides. For chemical composition was measured X-ray Photoelectron Spectroscopy (XPS) and it was found out the ratios of Ga:N and Al:N to be 1.07 and 1.04 respectively. For surface analysis was made Scanning Electron Microscopy (SEM). Optic transmission spectra showed band gaps to be 3.43 eV and 6.13 eV for GaN and AlN respectively.
Memristore parameters are strongly depend on the size of active layers. In this paper is reported the outcomes of memristore created with different size active layers. There are considered 1µ, 5µ and 10µ diameter separated devices in the form of crossbar with HfO2 + HfOx active layer and tungsten top contact, titanium nitride botton contact and aluminum wiring contact. As substrate was used sapphire and active layers of memristore was deposited by reactive magnetron sputtering technology. With photolithography exposure system by new pothomask has been done 1µ, 5µ and 10µ diameter lithography for formation active layers and all contacts. Leakage currents dropped to 0.01mA, increased cicles of histeresis of I-V curves and dramatically increased Roff /Ron ratio to be 100000.
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