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The control of defect in the gas-sensitive tin dioxide layers

Dimitrov D. T., Lutskaya O. F., Moshnikov V. A.

Electron Technology

2000

Vol. 33, No. 1/2

61-65

In this paper are presented the studies on processes of defect formation in the SnO₂ layers including the following results: the thermodynamic analysis of equilibrium of native point defects permit to solve the contradiction between n-type unipolar conductivity and double-side homogeneous area of SnO₂ phase; construction Po₂-T-x state diagram of tin dioxide; processes contraol of pore formation and their interaction with point defects in SnO₂ layers by putting into the charge volantive dope additives. The intergrated investigations of nano-structure formation processes made a contribution to the development technological methods of gas-sensitivity increase of layers to weak-polar molecules.