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Finite element method simulation of interface evolution during epitaxial growth

Gulkowski S., Olchowik J. M., Cieslak K., Moskvin P. P.

Materials Science Poland

2012

Vol. 30, No. 4

414--418

Epitaxial Lateral Overgrowth (ELO) is a method of epitaxial growth on a partially masked substrate. It can be a promising method for photovoltaic applications due to a possibility of producing thin and high quality silicon substrates. Since the mask prevents propagation of the substrate dislocations to the laterally overgrown parts of the ELO layer they are characterized by a lower dislocation density than the substrate. It means that it is possible to fabricate good quality solar cells on a poor quality Si substrate. The main goal of the research is to obtain a higher growth rate in the lateral direction than in the direction normal to the substrate. The epilayer growth kinetics depends on many technological factors, basically the growth temperature, the cooling rate, the solvent and the mask filling factor. For this reason the best way to achieve the goal is a computational analysis of the epitaxial layer growth process. This work presents a two-dimensional computational study of such a process of growth for different technological conditions. The computational model is based on the assumption of pure diffusion control growth.

Modelling of thin Si layers growth on partially masked Si substrate

Gułkowski S., Olchowik J.M., Jóźwik I., Moskvin P.P.

TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk

2008

Vol. 12, No 1-2

121-126

This paper presents a numerical simulation of epitaxial lateral overgrowth of silicon layers from the liquid phase of an Sn solvent. A two-dimensional diffusion equation has been solved and the concentration profiles of Si in a Si-Sn rich solution during the growth have been constructed. The epilayer thickness and width have been obtained from the concentration near the interface.