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1
Content available remote Zintegrowany układ oświetlenia próbki do mikroskopu ze skanującą sondą
Szyszka A., Paszkiewicz R, Szymański T., Tłaczała M.
Przegląd Elektrotechniczny
|
2018
|
R. 94, nr 8
21--24
PL
W artykule przedstawiono budowę oraz funkcjonalność układu oświetlenia próbki zintegrowanego z sytemem mikroskopu ze skanujacą sondą. Układ ten umożliwia pobudzenie próbki promieniowaniem optycznym w trakcie pomiaru lokalnych właściwości elektrycznych metodami skaningowej mikroskopi potencjału powierzchniowego, skaningowej mikroskopi rezystancji rozproszonej oraz skaningowej mikroskopii pojemnośćiowej. Ma to na celu uzyskanie dodatkowych informacji o niejednorodnościach właściwości powierzchniowych stanach pułapkowych czyli o ich typie, położeniu w przerwie zabronionej oraz o czasach generacji/rekombinacji. Pierwsze eksperymenty przeprowadzone na zmodyfikownycm stanowisku Bruker Multimode V w trybie skaningowej mikroskopi pojemnościowej pozwoliły zaobserwować istnienie wpływu konstrukcji heterostruktury AlGaN/GaN/Si na właściwości defektów występujących w warstwie bariery AlGaN.
EN
In the work the design assumptions, construction and performance of integrated illumination system for scanning probe microscope is presented. The system allows for optical stimulation of sample during measurements of local electrical properties by Scanning Potential Microscopy, Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy. Illumination of semiconductor sample using various wavelengths allow to obtain additional information about type, energy position and generation/recombination processes connected electronic surface states. First experiments using Bruker Multimode V Nanoscope AFM equipped with this system working in Scanning Capacitance Microscopy Mode showed the influence of AlGaN/GaN/Si heterostructure construction on electronic properties of surface defects in AlGaN barrier layer.
2
Content available remote Badanie elektrycznych właściwości powierzchni heterostruktur AlGaN/GaN/Si techniką skaningowej mikroskopii pojemnościowej
Szyszka A., Szymański T., Tłaczała M., Wośko M., Paszkiewicz R.
Przegląd Elektrotechniczny
|
2017
|
R. 93, nr 8
58--60
PL
Znaczne niedopasowanie stałych sieciowych oraz współczynników rozszerzalności cieplnej występujące pomiędzy warstwą epitaksjalną, a podłożem w heterostrukturach AlGaN/GaN/Si skutkuje dużą ilością defektów strukturalnych oraz występowaniem niejednorodności właściwości półprzewodnika. W prezentowanej pracy do zobrazowania lokalnych powierzchniowych niejednorodności elektrycznych właściwości AlGaN/GaN osadzanych na podłożu krzemowym techniką MOCVD została wykorzystana technika skaningowej mikroskopii pojemnościowej. Z analizy dwuwymiarowych map sygnału SCM oraz widm dC/dVAmp =f(VDC) w różnych obszarach powierzchni próbki wynika, że ujemny ładunek zgromadzony na dyslokacjach wstępujących w warstwach epitaksjalnych wpływa na właściwości powierzchni, lecz może nie mieć zdecydowanego wpływu na powstawanie dwuwymiarowego gazu elektronowego na interfejsie AlGaN/GaN.
EN
Large mismatch of lattice constants and thermal expansion coefficients between materials in AlGaN/GaN/Si heterostructures lead to high density of structural defects and material inhomogeneities in layers. In the presented work, local electronic properties of AlGaN/GaN/Si heterostructures are investigated using scanning capacitance microscopy. Analysis of two dimensional images of SCM signal and dC/dVAmp =f(VDC) spectrum allowed to conclude that negative charge accumulated at dislocations in epitaxial layers could affect the surface electronic state of the structure but might not have major impact on two dimensional electron gas formation at the AlGaN/GaN interface.
3
Content available remote LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications
Ściana B., Badura M., Dawidowski W., Bielak K., Radziewicz D., Pucicki D., Szyszka A., Żelazna K., Tłaczała M.
Opto-Electronics Review
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2016
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Vol. 24, No. 2
95--102
EN
The work presents doping characteristics and properties of high Si-doped InGaAs epilayers lattice-matched to InP grown by low pressure metal-organic vapour phase epitaxy. Silane and disilane were used as dopant sources. The main task of investigations was to obtain heavily doped InGaAs epilayers suitable for usage as plasmon-confinement layers in the construction of mid-infrared InAlAs/InGaAs/InP quantum-cascade lasers (QCLs). It requires the doping concentration of 1×10¹⁹ cm⁻³ and 1×10²⁰ cm⁻³ for lasers working at 9 μm and 5 μm, respectively. The electron concentration increases linearly with the ratio of gas-phase molar fraction of the dopant to III group sources (IV/III). The highest electron concentrations suitable for InGaAs plasmon-contact layers of QCL was achieved only for disilane. We also observed a slight influence of the ratio of gas-phase molar fraction of V to III group sources (V/III) on the doping efficiency. Structural measurements using high-resolution X-ray diffraction revealed a distinct influence of the doping concentration on InGaAs composition what caused a lattice mismatch in the range of –240 ÷ –780 ppm for the samples doped by silane and disilane. It has to be taken into account during the growth of InGaAs contact layers to avoid internal stresses in QCL epitaxial structures.
4
Content available remote Scanning capacitance microscopy characterization of AIIIBV epitaxial layers
Szyszka A., Obłąk M., Szymański T., Wośko M., Dawidowski W., Paszkiewicz R.
Materials Science Poland
|
2016
|
Vol. 34, No. 4
845--850
EN
The applicability of scanning capacitance microscopy (SCM) technique for chosen electrical properties characterization of AIIIBV structures fabricated by Metalorganic Vapor Phase Epitaxy (MOVPE) was examined. The calibration curves for quantitative characterization of doping levels in GaAs layers were created. The AlGaN/GaN/Si heterostructures for high electron mobility transistor fabrication and InGaAs tunnel junction for tandem solar cell characterization were presented. The crucial factors of measurement conditions which could influence the obtained results were also discussed.
5
Content available remote Badania rozwoju energetycznego na Podkarpaciu
Kalda G., Szyszka A., Urbanik M.
Czasopismo Inżynierii Lądowej, Środowiska i Architektury / Journal of Civil Engineering, Environment and Architecture
|
2015
|
z. 62, nr 3/I
207--218
PL
W artykule prezentowano analizę rozwoju energetycznego na Podkarpaciu. Pokazano związek między rozwojem gospodarczym a ochroną środowiska. W prace prowadzone badania rozwoju energetycznego, ankietowanie respondentów różnego wieku i wykształcenia. Celem badania było ukazanie, czy człowiek wie, jak przedstawia się sytuacja wykorzystywania energii i wpływ jej zużycia na środowisko naturalne. Pytania miały na celu sprawdzenie wiedzy ankietowanych na temat odnawialnych źródeł energii oraz stosunek społeczeństwa do energii jądrowej. W artykule zestawiono pytania główne i szczegółowe. Według ankietowania ludzie wiedzą, że korzystanie z pierwotnych źródeł energii przyczynia się do degradacji środowiska. Istotne znaczenie ma zamiana tych źródeł na odnawialne źródła energii. Po przeprowadzeniu badania wysunięte zostały takie wnioski, jak te, że społeczeństwo zdaje sobie sprawę, że rozwój gospodarczy przyczynia się do zanieczyszczenia środowiska przez to, że produkując energię emitowane do atmosfery są szkodliwe pyły i gazy. Wzrasta zainteresowanie wprowadzaniem i rozwojem sektora odnawialnych źródeł energii. Większość respondentów jest za wprowadzeniem zmiany pierwotnych źródeł energii odnawialnymi. Znany jest społeczeństwu problem globalnego ocieplenia wynikający głównie z emisji CO2 do atmosfery. Respondenci korzystają z OZE do ogrzewania ciepłej wody użytkowej. Rynek energetyki słonecznej wg ankietowanych ma największe szanse rozwoju w Polsce. Większa edukacja nie tylko w szkołach przekonałyby społeczeństwo do korzystania z odnawialnych źródeł energii.
EN
The article presents an analysis of energy development has region of Podkarpacie. Showing the relationship between economic development and environmental protection. The research work carried out energy development, surveys respondents of different ages and education. The aim of the study was to show that the man knows how is the situation of energy use and the impact of consumption on the environment. Questions were aimed at checking the knowledge of respondents about renewable energy sources and the relationship societies to the nuclear energy. In the article main and detailed questions were compared. According to conducting a survey people know that using primitive energy sources is contributing to the environmental decay. A change of these sources has material meaning to renewable energy sources. After conducting research such requests were protruding, that the society realized that the economic development is contributing to the environmental pollution, because of that producing the energy to the atmosphere harmful dusts and gasses are being emitted. An interest in leading and the development of the sector of renewable energy sources is growing. The majority of respondents are in favor of introducing changes to the original sources of renewable energy. The issue of global warming, that results from CO2 emission is known to the public. Respondents use of renewable energy sources for heating hot water. Solar energy market by respondents is most likely development in Poland. Higher education not only in schools would have persuaded the public to the use of renewable energy sources.
6
Content available remote Evaluation of AlGaN/GaN heterostructures properties by QMSA and AFM techniques
Szyszka A., Wośko M., Paszkiewicz B., Tłaczała M.
Materials Science Poland
|
2013
|
Vol. 31, No. 4
543--547
EN
Atomic force microscopy and Quantitative Mobility Spectrum Analysis (QMSA) were applied for characterization and evaluation of the quality of AlGaN/GaN heterostructures. The structural uniformity, growth mode and electrical properties of the heterostructures were determined. The obtained results indicated that the time of growth of the low temperature GaN nucleation layer influenced the morphology and electrical properties of the AlGaN/GaN heterostructure.
7
Wykorzystanie zaawansowanych trybów mikroskopii sił atomowych w badaniach struktur i przyrządów półprzewodnikowych
Szyszka A., Macherzyński W., Prażmowska J., Wośko M., Stafiniak A., Gryglewicz J., Ramiączek-Krasowska M., Paszkiewicz B., Jankowski B., Ściana B., Paszkiewicz R., Tłaczała M.
Elektronika : konstrukcje, technologie, zastosowania
|
2012
|
Vol. 53, nr 2
55-58
PL
W pracy przedstawione zostały wyniki charakteryzacji lokalnych właściwości detektorów MSM (Metal-Semiconductor-Metal) oraz rezystancyjnych wytworzonych w warstwach GaN, struktur tranzystorów unipolarnych wykonanych w warstwach azotku galu, cienkich warstw metali katalitycznych, heterostruktur AlAs/AIGaAs/GaAs oraz powierzchni węglika krzemu wykonanych różnymi trybami mikroskopii sił atomowych. Badania zostały przeprowadzone metodami Skaningowej Mikroskopii Potencjału Powierzchniowego SSPM (ang. Scanning Surface Potential Microscopy), Skaningowej Mikroskopii Rezystancji Rozproszonej SSRM (ang. Scanning Spreading Resistance Microscopy) oraz obrazowania fazowego.
EN
In this work characterization results of MSM (metal-semiconductor-metal) and resistive detectors fabricated in gallium nitride layers, GaN based unipolar transistors, thin catalytic metal layers, AlAs/AIGaAs/GaAs heterostructures and silicon carbide surface by various techniques of atomic force microscopy are presented. The examinations were performed by Scanning Surface Potential Microscopy (SSPM), Scanning Spreading Resistance Microscopy (SSRM) and in phase imaging mode.
8
Content available remote Characterization of AIIIBV epitaxial layers by scanning spreading resistance microscopy
Szyszka A., Ściana B., Radziewicz D., Macherzyński W., Paszkiewicz B., Tłaczała M.
Optica Applicata
|
2011
|
Vol. 41, nr 2
281--288
EN
One of the electrical characterization techniques of semiconductor structures with nanometer spatial resolution is scanning spreading resistance microscopy (SSRM). The applicability of SSRM technique for characterization of GaAs structures with n-type doping fabricated by metalorganic vapour phase epitaxy (MOVPE) was examined. The influence of scaling effect on the nanometer size AFM tip-semiconductor electrical characteristics was described. The results of characterization of device structure of magnetic field sensitive field effect transistor were presented.
9
Content available remote Application of AFM technique for creation of patterns in nanoscale
Ramiączek-Krasowska M., Szyszka A., Stafiniak A., Paszkiewicz R., Paszkiewicz B., Tłaczała M.
Optica Applicata
|
2011
|
Vol. 41, nr 2
307--314
EN
The lithography is a main technology process which determines the properties of semiconductor devices. The resolution of optical lithography is insufficient for creation of submicrometer patterns, like, e.g., gate electrode in HEMT transistors. Thus, a novel technique that uses AFM technique and common photolithography was proposed. In the paper, the results of nanoscratching lithography were presented and discussed. Also the transmission and root mean square of thin metal films measurements were summarized.
10
Content available remote Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3
Gryglewicz J., Oleszkiewicz W., Ramiączek-Krasowska M., Szyszka A., Prażmowska J., Paszkiewicz B., Paszkiewicz R., Tłaczała M.
Materials Science Poland
|
2011
|
Vol. 29, No. 4
260--265
EN
This work reports on the latest results of etching of different AlxGa1??xN/GaN heterostructures in relation to percentage composition of aluminum. The etching processes were carried out in a reactive ion etching (RIE) system using the mixture of BCl3/Cl2/Ar. The topography of the heterostructures surfaces and the slope were controlled using atomic force microsopy (AFM) technique. The photoluminescence spectra were used to determine the surface damage and to calculate the Al content in AlGaN/GaN heterostructures commonly used for high electron mobility transistors (HEMTs) fabrication.
11
Reaktywne trawienie jonowe heterostruktur AlGaN/GaN w plazmie Cl₂/BCl₃
Gryglewicz J., Oleszkiewicz W., Wośko M., Szyszka A., Paszkiewicz B.
Elektronika : konstrukcje, technologie, zastosowania
|
2011
|
Vol. 52, nr 11
19-21
PL
W procesie reaktywnego trawienia jonowego (RIE) wielkiej częstotliwości (w.cz) heterostruktur AlGaN/GaN, badano wpływ oddziaływania potencjału auto-polaryzacji dc podłoży (dc bias) oraz mocy wyładowania w.cz. na morfologię trawionej powierzchni oraz szybkość trawienia azotku galowo-glinowego. Procesy trawienia heterostruktur AlGaN/GaN, wytworzonych przy ciśnieniu atmosferycznym, techniką LP-MOVPE, wykonywano w urządzeniu Oxford Instruments Plasmalab 80Plus RIE. Szybkości trawienia oraz wpływ oddziaływania bombardowania jonowego na trawioną powierzchnię podloża badano przy użyciu mikroskopu sił atomowych (AFM) firmy Veeco Instruments pracującym w modzie tappingu. Podłoża testowe trawiono w plazmie chlorowej w stałej proporcji mieszaniny gazów CI₂/BCI₃/Ar.
EN
This work is concentrated on description of influence of process conditions on RIE of AlGaN/GaN heterostructures results, especially the influence of self-dc bias and rf power on morphology and etch rate of AlGaN. In study Oxford Instruments Plasmalab80 RIE tool was used to perform RIE processes on heterostructures grown using MOVPE technique at atmospheric pressure. The etch rates and the influence of ion bombardment on the heterostructures surface was studied by atomic force microscope (AFM) in tapping mode. The test heterostructures were etched in chlorine-based plasma at constant gas mixture of CI₂ /BCI₃/Ar.
12
Content available remote Surface photocurrent nonuniformities in MSM detectors fabricated in gallium nitride heteroepitaxial layers
Szyszka A., Paszkiewicz B., Paszkiewicz R., Tłaczała M.
Optica Applicata
|
2009
|
Vol. 39, nr 4
723-728
EN
A correlation of surface potential maps and photocurrent distribution images in metal-semiconductor-metal (MSM) structures allows to notice spatial nonuniformities in detector principle of operation. This effect exists only for low frequency modulation of optical excitation. This phenomenon was explained by the inhomogeneity of potential barriers and surface states density in heteroepitaxial gallium nitride layers caused by their columnar structure.
13
Content available remote Properties of AlNx thin films prepared by DC reactive magnetron sputtering
Stafiniak A., Muszyńska D., Szyszka A., Paszkiewicz B., Ptasiński K., Patela S., Paszkiewicz R., Tłaczała M.
Optica Applicata
|
2009
|
Vol. 39, nr 4
717-722
EN
In this paper, the results of investigation of the influence of cathode current on optical and dielectric AlNx thin-film properties are presented. AlNx films were prepared by pulsed DC reactive magnetron sputtering of Al target on substrates at room temperature. For characterization of fabricated test structures C-V spectroscopy, ellipsometry measurement and atomic force microscopy (AFM) were used.
14
Content available remote Effect of annealing temperature on the morphology of ohmic contact Ti/Al/Ni/Au to n-AlGaN/GaN heterostructures
Macherzyński W., Stafiniak A., Szyszka A., Gryglewicz J., Paszkiewicz B., Paszkiewicz R., Tłaczała M.
Optica Applicata
|
2009
|
Vol. 39, nr 4
673-679
EN
Ohmic contacts to AlGaN/GaN heterostructures which have low contact resistance and good surface morphology are required for the development of high temperature, high power and high frequency electronic devices. One of the keys to the advancement of such devices is the understanding of ohmic contacts formation to epitaxial aluminium gallium nitride layers. The paper presents the investigation of Ti/Al/Ni/Au based ohmic contact to n-AlGaN/GaN heterostructures grown by LP-MOVPE technique. Multilayer metallization of Ti/Al/Ni/Au with thicknesses of 10/100/40/150 nm, respectively, was evaporated by an electron gun (Ti, Ni) and resistance heater (Al, Au). The contacts were annealed at RTA (rapid thermal annealing) system in nitrogen ambient atmosphere over the temperature range from 775 °C to 850 °C. The time of annealing process was 60 seconds. The morphology of Ti/Al/Ni/Au ohmic contacts to n-AlGaN/GaN heterostructures was studied as a function of the annealing process conditions by an optical microscope and AFM (atomic force microscope). Simultaneously, the electrical parameters of Ti/Al/Ni/Au ohmic contacts were studied as a function of the annealing process conditions by the current-voltage (I-V ) method on dedicated test structures. The characteristic resistances of the Ti/Al/Ni/Au/n-AlGaN/GaN ohmic contacts were evaluated from the circular transmission line method (CTLM). The formation and deterioration mechanisms of the ohmic contacts to n-AlGaN/GaN hesterostructures were studied. One of the mechanisms of agglomerates enlargement during the thermal annealing of Ti/Al/Ni/Au metallization has been proposed.
15
Content available remote Application of nanoscratching in electronic devices
Ramiączek-Krasowska M., Szyszka A., Prażmowska J., Paszkiewicz R., Tłaczała M.
Optica Applicata
|
2009
|
Vol. 39, nr 4
711-716
EN
The lithography is a basic operation in the fabrication process of semiconductor devices. The scaling ability is the reason why the atomic force microscopy (AFM) nanolithograpy is currently studied in many laboratories. In the paper, the results of the mechanical AFM lithography, named nanoscribing or nanoscratching, are presented. In this method, the pattern is created by mechanical interaction between the AFM tip and a sample. This interaction requires the application of large forces in micronewtons scale.
16
Content available remote Submicron suspended structures based on A(III)B(V) epitaxial layers
Kramkowska M., Szyszka A., Ściana B., Zubel I.
Materials Science Poland
|
2008
|
Vol. 26, No. 1
173--179
EN
A technological process has been described for fabrication of suspended structures on GaAs substrate with AlGaAs/GaAs epitaxial multi-layers deposited by the AP MOVPE method. The patterns of beams and bridges with various dimensions were made by the photolithography method. The structures were fabricated by wet chemical etching in two systems of solutions based on phosphoric or citric acid with hydrogen peroxide. The former one enabled etching through the deposited epitaxial layers down to the GaAs substrate. The latter one allowed a selective etching of GaAs over AlGaAs. In effect, a beam made of AlGaAs layer was released and formed the suspended structure. As an etching mask, AZ 1813 positive photoresist was used. A series of rectangular beams with various planar dimensions and submicrometer thicknesses was fabricated. The elaborated process may be used for fabrication of suspended structures for various applications.
17
Content available remote Influence of the deposition parameters of nucleation layer on the properties of thick gallium nitride layers
Prażmowska J., Korbutowicz R., Paszkiewicz R., Szyszka A., Podhorodecki A., Misiewicz J., Tłaczała M.
Materials Science Poland
|
2008
|
Vol. 26, No. 1
79--85
EN
Gallium nitride layers were grown on sapphire (0001) substrates on low temperature (LT)-GaN layer deposited by the HVPE method. HCl flow rates and deposition times of the nucleation layer were varied in the range of 8-10 cm3/min and 5-9 min (with the step of 2 min), respectively. Morphologies of LTGaN buffer layers and subsequent high temperature (HT)-GaN layers were examined by scanning electron microscopy. Photoluminescence spectra of HT-GaN layers were recorded which allowed us to evaluate the optical quality of thick HVPE HT-GaN layers.
18
Content available remote Influence of the columnar structure of heteroepitaxial nitride layers on the transport of electrons
Szyszka A., Paszkiewicz B., Paszkiewicz R., Tłaczała M.
Materials Science Poland
|
2008
|
Vol. 26, No. 1
221--227
EN
The influence of the columnar structure of heteroepitaxial nitride layers on electronic transport has been described within the model of thermionic emission of carriers through potential barriers formed at grain boundaries. Dependence of the potential barrier height on the material properties and applied external voltage has been calculated. Potential barriers heights for gallium nitride layers grown by the metalorganic vapour phase epitaxy method has been estimated to be in the range of 20-60 meV and 10-40 meV in the dark and under illumination, respectively.
19
Content available remote A(III)B(V) detectors with graded active region
Wośko M., Paszkiewicz B., Szyszka A., Macherzyński W., Radziewicz D., Ściana B., Paszkiewicz R., Tłaczała M., Sęk G., Poloczek P., Motyka M., Misiewicz J.
Materials Science Poland
|
2008
|
Vol. 26, No. 1
87--94
EN
Results of modelling and fabrication of photodetectors with composition graded active layers have been presented. Simulated and measured spectral characteristics of the proposed detectors have been shown. Advantages of such structures have been discussed with respect to conventional detectors with non-graded active areas as well as some technological problems of compositionally graded semiconductor layers.
20
Content available remote Defect passivation of multicrystalline silicon solar cells by silicon nitride coatings
Lipiński M., Panek P., Kluska S., Zięba P., Szyszka A., Paszkiewicz B.
Materials Science Poland
|
2006
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Vol. 24, No. 4
1003--1007
EN
The influence of the hydrogenated silicon nitride coatings (SiN x:H) formed by the plasma enhanced chemical vapour deposition on the electrical activity of interfaces of the grains of mc-Si solar cell was examined. Passivation effects were evaluated by the measurements of light-beam-induced current scan maps. It was found that the SiNx:H layer obtained under optimized conditions significantly improves local photocurrent at the grain boundaries. The electrical parameters of mc-Si solar cells with and without the SiNx:H layers were compared.
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