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Peculiarities in optical response of hybrid-barrier GaSb/InAs/AlSb resonant tunneling diode structure

Dyksik M., Motyka M., Rygała M., Pfenning A., Hartmann F., Weih R., Worschech L., Höfling S., Sęk G.

Optica Applicata

2021

Vol. 51, nr 2

171--180

We present comprehensive investigation of the optical properties of hybrid-barrier GaSb-based resonant tunneling structures, containing a bulk-like GaInAsSb absorption layer and two asymmetric type II GaSb/InAs/AlSb quantum wells. Methods of optical spectroscopy by means of Fourier-transformed photoluminescence and photoreflectance are employed to probe optical transitions in this complex multilayer system. Based on the comparison between the absorption-like and emission-like spectra (also in function of temperature) confronted with band structure calculations four main transitions could be resolved and identified. For one of them, there has been observed unusually strong linear polarization dependence never reported in structures of that kind. It has been interpreted as related to a transition at the GaSb/GaInAsSb interface, for which various scenarios causing the polarization selectivity are discussed.

Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity

Motyka M., Janiak F., Ryczko K., Sęk G., Misiewicz J., Bauer A., Weih R., Höfling S., Kamp M., Forchel A.

Opto-Electronics Review

2011

Vol. 19, No. 2

137-139

Modulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap 'W'-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to emit in the mid infrared range of 3-4 µm for applications in laser-based gas sensing. Besides the optical transitions originating from the confined states in the type II quantum wells, a number of spectral features at the energy above the GaSb band gap have been detected. They have been analyzed in a function of InAs and GaSb layer widths and ultimately connected with resonant states in the range of AlSb tunneling barriers.