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2 International Journal of Microelectronics and Computer Science

2 2013

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Analysis in Commutation of a New High Voltage Thyristor Structure for High Temperature

Toulon G., Bourennane A, Isoird K

International Journal of Microelectronics and Computer Science

2013

Vol. 4, nr 2

49--54

In this paper, a high voltage thyristor structure using Schottky contacts on the anode side is analysed through 2D physical simulations in terms of switching performance. The replacement of the P emitter of a conventional symmetrical thyristor by a judicious association of P diffusions and Schottky contacts at the anode side contributes to the reduction of the leakage current in the forward direction and hence improves the forward blocking voltage at high temperature while maintaining its reverse blocking capability. It is shown by comparing this structure with a conventional thyristor, that the presence of Schottky contact does not degrade the turn-on process. It is also shown that the presence of Schottky contact reduces the device turn-off time, improving the maximum operating frequency of the device.

A Single-chip Integration Approach of Switching Cells Suitable for Medium Power Applications

El-Khadiry A, Bourennane A, Richardeau F, Imbernon E, Breil M

International Journal of Microelectronics and Computer Science

2013

Vol. 4, nr 2

43--48

This paper deals with the monolithic integration of switching cells that are used in power electronics for the realization of static power converters. The aim of the monolithic integration of the power switching cells is to suppress wire bonds in order to improve electrical performance as well as reliability of power modules intended for medium power applications. Within this context, the single chip integration approach presented in this paper constitutes a solution and a promising approach that combines judiciously multiple reverse conducting IGBT switches in a single Si-chip. The operating modes of the integrated structure are validated in an inverter application using 2D Sentaurus simulations. The targeted packaging of the single chip converter on DBC/IMS substrates doesn’t use any wire bonding and doesn’t exhibit any dv/dt stress directly on the DBC/IMS substrates.