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1
Content available remote Modeling of the processes of low-dimensional structures formation on semiconductors surface by scanning laser radiation
Manak I., Medvid A., Panfilionak E., Wójcik W.
Przegląd Elektrotechniczny
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2010
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R. 86, nr 7
139-141
EN
The analysis of results of experiment in the formation of periodic structures on GaAs surface by powerful laser radiation was conducted. The physic model of the process of structures formation was proposed. The numerical calculations of heating and melting processes of near-surface region was conducted.
PL
W pracy przeprowadzono analizę wyników eksperymentu obejmującego tworzenie struktur periodycznych na powierzchni GaAs za pomocą silnej radiacji laserowej. Zaproponowano fizyczny model procesu formowania struktur. Przedstawiono obliczenia numeryczne procesów ogrzewania i topienia obszarów przypowierzchniowych.
2
Content available Nanohills in SiGe/Si structure formed by laser radiation
Medvid' A., Onufrijev P., Lyutovich K., Oehme M., Kasper E., Dmitruk I., Pundyk I., Manak I., Grabovskis D.
Journal of Automation Mobile Robotics and Intelligent Systems
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2009
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Vol. 3, No. 4
62-64
EN
Formation of self-assembling nanohills induced by irradiation of nanosecond Nd:YAG laser pulses on the Si0.7Ge0.3/Si hetero-epitaxial structures is reported. The atomic force microscope study of the irradiated surface morphology has shown a start of nanohills formation after laser irradiation of the intensity I=7.0 MW/cm2. The giant "blue shift" of photoluminescence spectra with maximum intensity in region of 700-800 nm (1.76 - 1.54 eV) is explained by the Quantum confinement effect in the nanohills. The maximum of this photoluminescence band slightly shifts to shorter wavelengths with the increase of the intensity of laser pulses used for sample treatment. Appearance of the 300 cm-1 Ge-Ge vibration band in Raman scattering spectra for sample irradiated with I=20.0MW/cm2 is explained by Ge phase formation. Formation of the Ge-rich phase is explained by localization of Ge atoms drifting toward the irradiated surface under the thermal gradient due to strong absorption of laser radiation.
3
Content available Mechanism of nanostructure formation on a surface of CdZnTe crystal by laser irradiation
Medvid' A., Mychko A., Gnatyuk V. A., Levytskyi S., Naseka Y.
Journal of Automation Mobile Robotics and Intelligent Systems
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2009
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Vol. 3, No. 4
127-129
EN
Self-organizing nanometer size structures are observed on the surface of CdZnTe crystal irradiated by strongly absorbed Nd:YAG laser irradiation (LR) at intensity range of 4-12 MW/cm2. According to this model the Thermogradient effect has the main role in the interaction process of LR and semiconductors. The surface state of the CdZnTe under the influence of Nd:YAG laser irradiation has been studied. A state has been defined by atom force microscope. The influence of LR on the photoluminescence spectrahas show that at a threshold intensity of LR I=4 MW/cm2 creation of nanometer size structure begins. A graded band gap structure with optical window was formed at the top of nano-hills.
4
Content available Influence of powerful laser radiation on formation of pores in Si by electrochemical etching
Medvid A., Onufrijevs P., Fedorenko L., Yusupov M., Dauksta E.
Journal of Automation Mobile Robotics and Intelligent Systems
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2009
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Vol. 3, No. 4
166-168
EN
The influence of strongly absorbing N2 laser radiation on pores formation on a surface of Si single crystal has been investigated using optical microscope and atomic force microscope. After irradiation by the laser and subsequent electrochemical etching in HF acid solution morphological changes of the irradiated parts of a surface of Si were observed. At the same time, pores formation on the nonirradiated parts of Si surface took place. The porous part of the Si surface is characterized by strong photoluminescence in red part of spectra with maximum at 1.88 eV. Suppression of the pores formation by laser radiation is explained with inversion of Si type condition from p to n. This fact is explained by Thermogradient effect - generation and redistribution of the intrinsic defects in gradient of temperature. It was shown that the depth of p-Si layer on n-Si ubstrate depends on intensity of laser radiation and it increases with intensity of laser radiation. The results of the investigation can be used for optical recording and storage of information on surface of semiconductors.
5
Content available Formation of "black silicon" on a surface of Ni/Si structure by Nd:YAG laser radiation
Medvid' A., Karabko A., Onufrijevs P., Dauksta E., Dostanko A.
Journal of Automation Mobile Robotics and Intelligent Systems
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2009
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Vol. 3, No. 4
140-142
EN
We have shown the possibility to form a new type of material known as "black silicon". After irradiation of a Si sample surface, covered with 30 nm thick Ni layer, by Nd: YAG laser beam at intensity 4.5 MW/cm2 the "black silicon" was formed. The formation and self-organization of conelike microstructures on the Ni/Si surface has been detected by scanning electron microscope (SEM). Light is repeatedly reflected between the cones in the way that most of it is absorbed, therefore the surface becomes like a "black body" absorber. The micro-chemical analysis performed on SEM has shown that the microstructures contain NiSi2. This was approved by presence of LO phonon line in Raman back scattering spectrum. The control of micro-cone shape and height was achieved by changing the laser intensity and number of pulses.
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