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Struktury fotowoltaiczne oparte o heterozłącze ZnO/Si

Pietruszka R., Łuka G., Witkowski B. S., Kopalko K., Zielony E., Biegański P., Płaczek-Popko E., Godlewski M.

Prace Instytutu Elektrotechniki

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2014

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Z. 264

113-123

PL

Warstwy tlenku cynku otrzymane metodą osadzania warstw atomowych ALD zostały użyte jako n-typu partner dla p-typu krzemu. Jako przezroczystą górną elektrodę wybrano warstwę tlenku cyku domieszkowaną glinem (tak zwana warstwa TCO – Transparent Conductive Oxide). Użyto tanich podłóż krzemowych o niezoptymalizowanej dla zastosowań fotowoltaicznych grubości. W niniejszej pracy badano proste struktury fotowoltaiczne ZnO/Si w celu redukcji kosztów produkcji energii elektrycznej pozyskiwanej za pomocą ogniw fotowoltaicznych. Zmierzona sprawność zoptymalizowanych częściowo (warstwy ZnO) ogniw fotowoltaicznych wyniosła 6%.

EN

We report on the properties of photovoltaic (PV) structures based on thin films of n-type zinc oxide grown by atomic layer deposition method on a cheap silicon substrate. Thin films of ZnO are used as n-type partner to p-type Si (110) and, when doped with Al, as a transparent electrode. PV structures with different electrical parameters and thicknesses of ZnO layers were deposited to determine the optimal performance of PV structures. The best response we obtained for the structure with ZnO layer thickness of 800 nm. The soobtained PV structures show 6% efficiency.

2

Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE

Kamyczek P., Biegański P., Płaczek-Popko E., Zielony E., Gelczuk Ł., Sciana B., Pucicki D., Radziewicz D., Tlaczala M, Kopalko K., Dabrowska-Szata M.

Materials Science Poland

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2013

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Vol. 31, No. 4

595--600

EN

In this paper we report on the optical and electrical studies of single GaAs1-xNx epitaxial layers grown on GaAs substrates by means of atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). Three kinds of samples with 1.2 %, 1.6 % and 2.7 % nitrogen content were studied. Optical properties of the layers were investigated with the use of room temperature transmittance and reflectance measurements. Subsequently Schottky Au–GaAs1-xNx contacts were processed and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements within 80 – 480 K temperature range. From the I-V and C-V characteristics the ideality factor, series resistance and built-in potential were determined. Obtained diodes can be used for further studies on defects with the use of DLTS method.

3

Photoelectrical properties of photovoltaic structures based on CdTe/ZnO

Zielony E., Kamyczek P., Biegański P., Płaczek-Popko E., Pietruszka R., Łuka G., Godlewski M.

Elektronika : konstrukcje, technologie, zastosowania

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2012

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Vol. 53, nr 6

100-101

EN

The n-type ZnO layers were grown by ALD method on p-type CdTe substrate. I-V characteristics verified rectifying properties of the test ZnO/CdTe solar cell diode and exhibited photovoltaic effect when the junction was exposed to light. The series resistance of the diode, determined from the I-V curves, equals to 36 Ω. Such a high value is responsible for low value of fill factor and efficiency of the solar cell. Photoresponse properties of the studied junction were measured at room temperature. Efficient photoresponse was observed within wavelength range of 400-1000 nm. These results indicate that n-ZnO/p-CdTe junction is suitable for the fabrication of efficient solar cells. It was shown that the thickness of the ZnO layers can be also determined with the help of interference fringes of photoresponse analysis. Further work will involve a better understanding of the properties of window layer and junction formation processes.

4

GaAsN as a photovoltaic material : photoelectrical characterization

Kamyczek P., Płaczek-Popko E., Biegański P., Zielony E., Ściana B., Tłaczała M.

Elektronika : konstrukcje, technologie, zastosowania

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2012

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Vol. 53, nr 6

109-110

EN

In summary, we present in this study the results of studies on the layers of GaAs1-xNx grown on n-type GaAs substrates by atmospheric pressure metal organic vapour phase epitaxy (APMOVPE), Using transmittance, reflectance, photocurrent measurements and empirical expression for Eg a new nitrogen content for the studies samples was obtained. Using dark and illuminated I-V characteristics the main parameters of the Schottky contacts (short-circuit current Isc, open circuit-voltage, Voc, and fill factor, FF) were determined. Obtained contacts are promising for solar cell application.

5

Nowy emulsyjny materiał wybuchowy metanowy specjalny – EMULINIT PM

Biegański P., Margas M., Matyszkiewicz B.

Materiały Wysokoenergetyczne

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2010

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T. 2

129--134

PL

Prezentowana praca jest fragmentem badań prowadzonych w NITROERG S.A. w zakresie kompleksowej poprawy bezpieczeństwa prowadzenia prac strzałowych w warunkach zagrożeń tąpaniami i wybuchem metanu/pyłu węglowego.Opracowano nową recepturę materiału metanowego specjalnego opartą na matrycy do produkcji materiałów wybuchowych emulsyjnych. Materiał ten charakteryzuje się znaczną poprawą bezpieczeństwa stosowania w porównaniu do tradycyjnego metanitu specjalnego, przy polepszonych własnościach użytkowych.Ponadto przedstawiono rys historyczny materiałów wybuchowych bezpiecznych, ich rodzaje dostępne na rynku krajowym oraz porównano istotne charakterystyki ww. materiałów wybuchowych.

6

Discontinuous metal films on dielectric substrates, their optical and electrical properties, structures and statistical descriptions

Dobierzewska-Mozrzymas E., Biegański P., Pieciul E.

Optica Applicata

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2001

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Vol. 31, nr 1

53-81

EN

A brief survey of some results concerning optical and electrical properties of discontinuous metal films on dielectric substrates and their statistical description is given. Optical properties (transmittance and imaginary part of dielectric permittivity spectra) of Al, Cu and Mn discontinuous films are presented and interpreted in terms of effective medium theories; modified Maxwell-Garnett and Bruggeman. The ranges of dielectric properties, the percolation threshold, and the range of metallic properties are determined for optical and electrical properties of the film examined. The considerations concerning electrical properties include such conduction mechanisms as metal conduction, substrate conduction, quantum tunneling, thermally activated tunneling and hopping. Real structures of the films are examined making use of electron microscope. Also the computer model for determining the contribution of the fundamental conduction mechanisms in discontinuous films is introduced. The inverse power law is used to describe the structure and the statistical distributions of inhomogeneous films of Au, Cu and Mn on dielectric substrates. To this end, the rank of an island is connected with its area for the films with different coverage coefficients (metal content). The dependencies of the island areas on the rank orders in a double-logarithmic plot are straight lines according to the Mandelbrot law. The slope of the straight line characterises the ranges of the distributions of the islands: (i) the log-normal or the Gaussian one (with two parameters of statistical distribution-the mean value and the variance), (ii) the Poisson distribution (with one parameter-the mean value), (iii) Levy stable distribution (the parameters of distribution are infinite). The correlation between optical and electrical properties of discontinuous metal films and their structures and statistical description is found.